Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN
Kikuta, Daigo, Narita, Tetsuo, Kutsuki, Katsuhiro, Uesugi, Tsutomu, Kachi, Tetsu
Published in Jpn J Appl Phys (01.08.2013)
Published in Jpn J Appl Phys (01.08.2013)
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Journal Article
Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy
Narita, Tetsuo, Kikuta, Daigo, Takahashi, Naoko, Kataoka, Keita, Kimoto, Yasuji, Uesugi, Tsutomu, Kachi, Tetsu, Sugimoto, Masahiro
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
GaN power device and reliability for automotive applications
Kachi, T., Kikuta, D., Uesugi, T.
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Conference Proceeding
Study on post-etching processes for p-type GaN using HAX-PES
Kikuta, Daigo, Narita, Tetsuo, Takahashi, Naoko, Kataoka, Keita, Kimoto, Yasuji, Tomita, Kazuyoshi, Uesugi, Tsutomu, Kachi, Tetsu
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall
Kanechika, Masakazu, Ito, Kenji, Narita, Tetsuo, Tomita, Kazuyoshi, Iwasaki, Shiro, Kikuta, Daigo, Kachi, Tetsu
Published in Physica status solidi. PSS-RRL. Rapid research letters (01.11.2024)
Published in Physica status solidi. PSS-RRL. Rapid research letters (01.11.2024)
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Journal Article
Local atomic structure analysis of GaN surfaces via X‐ray absorption spectroscopy by detecting Auger electrons with low energies
Isomura, Noritake, Kikuta, Daigo, Takahashi, Naoko, Kosaka, Satoru, Kataoka, Keita
Published in Journal of synchrotron radiation (01.11.2019)
Published in Journal of synchrotron radiation (01.11.2019)
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Journal Article
Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface
Ito, Kenji, Iwasaki, Shiro, Tomita, Kazuyoshi, Kano, Emi, Ikarashi, Nobuyuki, Kataoka, Keita, Kikuta, Daigo, Narita, Tetsuo
Published in Applied physics express (17.07.2023)
Published in Applied physics express (17.07.2023)
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Journal Article
Over 200 cm 2 V −1 s −1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface
Ito, Kenji, Iwasaki, Shiro, Tomita, Kazuyoshi, Kano, Emi, Ikarashi, Nobuyuki, Kataoka, Keita, Kikuta, Daigo, Narita, Tetsuo
Published in Applied physics express (01.07.2023)
Published in Applied physics express (01.07.2023)
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Journal Article
Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
Kikuta, Daigo, Takaki, Ryohei, Matsuda, Junya, Okada, Masaya, Wei, Xin, Ao, Jin-Ping, Ohno, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Engineered interface charges and traps in GaN metal-oxide-semiconductor field-effect transistors providing high channel mobility and E -mode operation
Narita, Tetsuo, Ito, Kenji, Iguchi, Hiroko, Kikuta, Daigo, Kanechika, Masakazu, Tomita, Kazuyoshi, Iwasaki, Shiro, Kataoka, Keita, Kano, Emi, Ikarashi, Nobuyuki, Horita, Masahiro, Suda, Jun, Kachi, Tetsu
Published in Japanese Journal of Applied Physics (29.10.2024)
Published in Japanese Journal of Applied Physics (29.10.2024)
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Journal Article
Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices
Kikuta, Daigo, Ito, Kenji, Narita, Tetsuo, Kachi, Tetsu
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Journal Article