Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
Kitatani, Takeshi, Kondow, Masahiko, Kikawa, Takeshi, Yazawa, Yoshiaki, Okai, Makoto, Uomi, Kazuhisa
Published in Japanese Journal of Applied Physics (01.09.1999)
Published in Japanese Journal of Applied Physics (01.09.1999)
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Evidence of Ga 2 Se 3 -Related Compounds on Se-Stabilized GaAs Surfaces
Takatani, Shinichiro, Nakano, Asao, Ogata, Kiyoshi, Takeshi Kikawa, Takeshi Kikawa
Published in Japanese Journal of Applied Physics (01.04.1992)
Published in Japanese Journal of Applied Physics (01.04.1992)
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545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density
Kasai, Jun-ichi, Akimoto, Ryouichi, Kuwatsuka, Haruhiko, Hasama, Toshifumi, Ishikawa, Hiroshi, Fujisaki, Sumiko, Kikawa, Takeshi, Tanaka, Sigehisa, Tsuji, Shinji, Nakajima, Hiroshi, Tasai, Kunihiko, Takiguchi, Yoshiro, Asatsuma, Tsunenori, Tamamura, Koshi
Published in Applied physics express (25.09.2010)
Published in Applied physics express (25.09.2010)
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Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy
Uchiyama, Hiroyuki, Kikawa, Takeshi, Taniguchi, Takafumi, Shiota, Takashi
Published in Journal of materials research (01.05.2006)
Published in Journal of materials research (01.05.2006)
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Characterization and modeling of bias-stressed InGaP/GaAs collector-up tunneling-collector HBTs fabricated with boron-ion implantation
Mochizuki, K., Tanaka, K.-I., Uchiyama, H., Ohta, H., Terano, A., Kikawa, T., Taniguchi, T., Mita, R.
Published in IEEE transactions on electron devices (01.10.2005)
Published in IEEE transactions on electron devices (01.10.2005)
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