A floating RESURF (FRESURF) LD-MOSFET device concept
Khemka, V., Parthasarathy, V., Ronghua Zhu, Bose, A.
Published in IEEE electron device letters (01.10.2003)
Published in IEEE electron device letters (01.10.2003)
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Journal Article
A double RESURF LDMOS with drain profile engineering for improved ESD robustness
Parthasarathy, V., Khemka, V., Zhu, R., Whitfield, J., Bose, A., Ida, R.
Published in IEEE electron device letters (01.04.2002)
Published in IEEE electron device letters (01.04.2002)
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Journal Article
A novel technique to decouple electrical and thermal effects in SOA limitation of power LDMOSFET
Khemka, V., Parthasarathy, V., Ronghua Zhu, Bose, A.
Published in IEEE electron device letters (01.10.2004)
Published in IEEE electron device letters (01.10.2004)
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Journal Article
SiC and GaN bipolar power devices
Chow, T.P., Khemka, V., Fedison, J., Ramungul, N., Matocha, K., Tang, Y., Gutmann, R.J.
Published in Solid-state electronics (01.02.2000)
Published in Solid-state electronics (01.02.2000)
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Journal Article
Experimental and theoretical analysis of energy capability of RESURF LDMOSFETs and its correlation with static electrical safe operating area (SOA)
Khemka, V., Parthasarathy, V., Zhu, R., Bose, A., Roggenbauer, T.
Published in IEEE transactions on electron devices (01.06.2002)
Published in IEEE transactions on electron devices (01.06.2002)
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Journal Article
Characterization of phosphorus implantation in 4H-SiC
Khemka, V., Patel, R., Ramungul, N., Chow, T. P., Ghezzo, M., Kretchmer, J.
Published in Journal of electronic materials (01.03.1999)
Published in Journal of electronic materials (01.03.1999)
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Journal Article
Management of locoregional stage esophageal cancer: a single center experience
Javle, M. M., Nwogu, C. E., Donohue, K. A., Iyer, R. V., Brady, W. E., Khemka, S. V., Smith, J. L., Demmy, T. L., Yang, G. Y., Nava, H. R.
Published in Diseases of the esophagus (01.04.2006)
Published in Diseases of the esophagus (01.04.2006)
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Journal Article
A nondestructive electrical test structure to monitor deep trench depth for automated parametric process control
Khemka, V., Roggenbauer, T., Parthasarathy, V., Puchades, I., Ronghua Zhu, Bose, A., Butner, M.
Published in IEEE transactions on semiconductor manufacturing (01.05.2004)
Published in IEEE transactions on semiconductor manufacturing (01.05.2004)
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Journal Article
6H-SiC p/sup +/-n junctions fabricated by beryllium implantation
Ramungul, N., Khemka, V., Zheng, Y., Patel, R., Chow, T.P.
Published in IEEE transactions on electron devices (01.03.1999)
Published in IEEE transactions on electron devices (01.03.1999)
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Journal Article
Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC
Chatty, K., Khemka, V., Chow, T. P., Gutmann, R. J.
Published in Journal of electronic materials (01.03.1999)
Published in Journal of electronic materials (01.03.1999)
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Journal Article
39MO Phase III ENGOT-En9/LEAP-001 study: Lenvatinib + pembrolizumab (LEN/PEMBRO) vs chemotherapy (chemo) as first-line (1L) therapy for advanced or recurrent endometrial cancer
Pignata, S., Marth, C., Moore, R.G., Bidzinski, M., Ayhan, A., Pérez, M.J. Rubio, Beiner, M., Hall, M., Vulsteke, C., Braicu, I., Sonoda, K., Wu, X., Frentzas, S., Mattar, A., McKenzie, J., Yao, L., Khemka, V., Gilbert, L., Makker, V.
Published in ESMO open (01.06.2024)
Published in ESMO open (01.06.2024)
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Journal Article
An improved model of ion-implanted GaAs OPFET
Chakrabarti, P., Shrestha, N.L., Srivastava, S., Khemka, V.
Published in IEEE transactions on electron devices (01.09.1992)
Published in IEEE transactions on electron devices (01.09.1992)
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Journal Article
Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier
Khemka, V., Patel, R., Ramungul, N., Chow, T.P., Gutmann, R.J.
Published in 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) (1999)
Published in 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) (1999)
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