Surface-stress-induced order in SiGe alloy films
LeGoues, FK, Kesan, VP, Iyer, SS, Tersoff, J, Tromp, R
Published in Physical review letters (23.04.1990)
Published in Physical review letters (23.04.1990)
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Journal Article
Probing band structure anisotropy in quantum wells via magnetotunneling
Gennser, U, Kesan, VP, Syphers, DA, Smith, 3rd, TP, Iyer, SS, Yang, ES
Published in Physical review letters (30.12.1991)
Published in Physical review letters (30.12.1991)
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Journal Article
A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
Iyer, S.S., Solomon, P.M., Kesan, V.P., Bright, A.A., Freeouf, J.L., Nguyen, T.N., Warren, A.C.
Published in IEEE electron device letters (01.05.1991)
Published in IEEE electron device letters (01.05.1991)
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Journal Article
Conference Proceeding
Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices
Yu, E.T., Johnson, M.B., Kesan, V.P., Powell, A.R., Halbout, J.-M., Iyer, S.S.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Journal Article
Conference Proceeding
Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
Kesan, V.P., May, P.G., LeGoues, F.K., Iyer, S.S.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
Conference Proceeding
Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures
CHENG, J.-P, KESAN, V. P, GRÜTZMACHER, D. A, SEDGWICK, T. O
Published in Surface science (20.03.1994)
Published in Surface science (20.03.1994)
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Conference Proceeding
Journal Article
Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE
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Journal Article
Conference Proceeding
A new transit-time device using quantum-well injection
Kesan, V.P., Neikirk, D.P., Streetman, B.G., Blakey, P.A.
Published in IEEE electron device letters (01.04.1987)
Published in IEEE electron device letters (01.04.1987)
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Journal Article
Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures
CAMPBELL, A. C, KESAN, V. P, BLOCK, T. R, CROOK, G. E, NEIKIRK, D. P, STREETMAN, B. G
Published in Journal of electronic materials (01.09.1989)
Published in Journal of electronic materials (01.09.1989)
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Journal Article
Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x films
LeGoues, FK, Tromp, RM, Kesan, VP, Tsang, J
Published in Physical review. B, Condensed matter (15.04.1993)
Published in Physical review. B, Condensed matter (15.04.1993)
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Journal Article
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys
Tsang, JC, Kesan, VP, Freeouf, JL, LeGoues, FK, Iyer, SS
Published in Physical review. B, Condensed matter (15.09.1992)
Published in Physical review. B, Condensed matter (15.09.1992)
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Journal Article
Microwave and millimeter-wave QWITT diode oscillators
Kesan, V.P., Mortazawi, A., Miller, D.R., Reddy, V.K., Neikirk, D.P., Itoh, T.
Published in IEEE transactions on microwave theory and techniques (01.12.1989)
Published in IEEE transactions on microwave theory and techniques (01.12.1989)
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Journal Article
A VLSI-compatible high-speed silicon photodetector for optical data link applications
Ghioni, M., Zappa, F., Kesan, V.P., Warnock, J.
Published in IEEE transactions on electron devices (01.07.1996)
Published in IEEE transactions on electron devices (01.07.1996)
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Journal Article