Electronic Defects in Amorphous Oxide Semiconductors: A Review
Ide, Keisuke, Nomura, Kenji, Hosono, Hideo, Kamiya, Toshio
Published in Physica status solidi. A, Applications and materials science (06.03.2019)
Published in Physica status solidi. A, Applications and materials science (06.03.2019)
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Journal Article
Present status of amorphous In-Ga-Zn-O thin-film transistors
Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo
Published in Science and technology of advanced materials (01.08.2010)
Published in Science and technology of advanced materials (01.08.2010)
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Journal Article
Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x : Tauc-Lorentz optical model and origins of subgap states
Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo
Published in Physica status solidi. A, Applications and materials science (01.05.2009)
Published in Physica status solidi. A, Applications and materials science (01.05.2009)
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Journal Article
Conference Proceeding
Back-Channel Defect Termination by Sulfur for p‑Channel Cu2O Thin-Film Transistors
Chang, Hsuan, Huang, Chi-Hsin, Matsuzaki, Kosuke, Nomura, Kenji
Published in ACS applied materials & interfaces (18.11.2020)
Published in ACS applied materials & interfaces (18.11.2020)
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Journal Article
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Hosono, Hideo, Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro
Published in Nature (25.11.2004)
Published in Nature (25.11.2004)
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Journal Article
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
Ohta, Hiromichi, Kim, Sungwng, Mune, Yoriko, Mizoguchi, Teruyasu, Nomura, Kenji, Ohta, Shingo, Nomura, Takashi, Nakanishi, Yuki, Ikuhara, Yuichi, Hirano, Masahiro, Hosono, Hideo, Koumoto, Kunihito
Published in Nature materials (01.02.2007)
Published in Nature materials (01.02.2007)
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Journal Article
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
Nomura, Kenji, Takagi, Akihiro, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo
Published in Japanese Journal of Applied Physics (01.05.2006)
Published in Japanese Journal of Applied Physics (01.05.2006)
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Journal Article
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
Nomura, Kenji, Ohta, Hiromichi, Ueda, Kazushige, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo
Published in Science (American Association for the Advancement of Science) (23.05.2003)
Published in Science (American Association for the Advancement of Science) (23.05.2003)
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Journal Article
Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo
Published in Physica status solidi. A, Applications and materials science (01.07.2010)
Published in Physica status solidi. A, Applications and materials science (01.07.2010)
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Journal Article
Conference Proceeding
Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas
Ohta, Hiromichi, Mizuno, Taku, Zheng, Shijian, Kato, Takeharu, Ikuhara, Yuichi, Abe, Katsumi, Kumomi, Hideya, Nomura, Kenji, Hosono, Hideo
Published in Advanced materials (Weinheim) (07.02.2012)
Published in Advanced materials (Weinheim) (07.02.2012)
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Journal Article
Development of highly reliable ferroelectric random access memory and its Internet of Things applications
Eshita, Takashi, Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Saito, Hitoshi, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Kataoka, Yuji, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Factors controlling electron transport properties in transparent amorphous oxide semiconductors
Hosono, Hideo, Nomura, Kenji, Ogo, Youichi, Uruga, Tomoya, Kamiya, Toshio
Published in Journal of non-crystalline solids (01.05.2008)
Published in Journal of non-crystalline solids (01.05.2008)
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Journal Article
Conference Proceeding
Familial Adenomatous Polyposis with Atypical Clinical Morphology and Genetic Variants
Komeda, Yoriaki, Ishikawa, Hideki, Yoshida, Teruhiko, Ushiama, Mineko, Yoshida, Saki, Nomura, Kenji, Kono, Masashi, Omoto, Shunsuke, Takenaka, Mamoru, Hagiwara, Satoru, Kashida, Hiroshi, Kudo, Masatoshi
Published in Internal Medicine (15.04.2024)
Published in Internal Medicine (15.04.2024)
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Journal Article
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
TAKAGI, Akihiro, NOMURA, Kenji, OHTA, Hiromichi, YANAGI, Hiroshi, KAMIYA, Toshio, HIRANO, Masahiro, HOSONO, Hideo
Published in Thin solid films (22.08.2005)
Published in Thin solid films (22.08.2005)
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Conference Proceeding
Journal Article
Switching Mechanism behind the Device Operation Mode in SnO‐TFT
Lee, Alex W., Zhang, Yong, Huang, Chi‐Hsin, Matsuzaki, Kosuke, Nomura, Kenji
Published in Advanced electronic materials (01.12.2020)
Published in Advanced electronic materials (01.12.2020)
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Journal Article
Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
Ohta, Hiromichi, Sato, Yukio, Kato, Takeharu, Kim, SungWng, Nomura, Kenji, Ikuhara, Yuichi, Hosono, Hideo
Published in Nature communications (16.11.2010)
Published in Nature communications (16.11.2010)
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Journal Article
Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
Kikuchi, Yutomo, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo
Published in Thin solid films (31.03.2010)
Published in Thin solid films (31.03.2010)
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Journal Article