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Year of Publication 09.04.2020
Patent
TWI762656B
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Year of Publication 01.05.2022
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Year of Publication 01.05.2022
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High quality bulk GaN crystal grown by acidic ammonothermal method
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Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
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Conference Proceeding