Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
Kawaguchi, Yoshinobu, Huang, Shih-Chieh, Farrell, Robert M, Zhao, Yuji, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.05.2013)
Published in Applied physics express (01.05.2013)
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Journal Article
Blue Laser Diodes Fabricated on m -Plane GaN Substrates
Tsuda, Yuhzoh, Ohta, Masataka, Vaccaro, Pablo O., Ito, Shigetoshi, Hirukawa, Shuichi, Kawaguchi, Yoshinobu, Fujishiro, Yoshie, Takahira, Yoshiyuki, Ueta, Yoshihiro, Takakura, Teruyoshi, Yuasa, Takayuki
Published in Applied physics express (01.01.2008)
Published in Applied physics express (01.01.2008)
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Journal Article
100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth
Kawaguchi, Yoshinobu, Murakawa, Kentaro, Usagawa, Motohisa, Aoki, Yuuta, Takeuchi, Kazuma, Kamikawa, Takeshi
Published in Crystal growth & design (03.05.2023)
Published in Crystal growth & design (03.05.2023)
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Journal Article
MANUFACTURING METHOD AND MANUFACTURING DEVICE FOR SEMICONDUCTOR ELEMENT
KAWAGUCHI, Yoshinobu, KAMIKAWA, Takeshi, KITABAYASHI, Tomohiro, USAGAWA, Motohisa, OTA, Kosuke, MURAKAWA, Kentaro
Year of Publication 13.06.2024
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Year of Publication 13.06.2024
Patent
Green Semipolar ($20\bar{2}\bar{1}$) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
Zhao, Yuji, Oh, Sang Ho, Wu, Feng, Kawaguchi, Yoshinobu, Tanaka, Shinichi, Fujito, Kenji, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.06.2013)
Published in Applied physics express (01.06.2013)
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Journal Article