Chlorine-based dry etching of β-Ga2O3
Hogan, Jack E, Kaun, Stephen W, Ahmadi, Elaheh, Oshima, Yuichi, Speck, James S
Published in Semiconductor science and technology (14.04.2016)
Published in Semiconductor science and technology (14.04.2016)
Get full text
Journal Article
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Oshima, Yuichi, Ahmadi, Elaheh, Kaun, Stephen, Wu, Feng, Speck, James S
Published in Semiconductor science and technology (01.01.2018)
Published in Semiconductor science and technology (01.01.2018)
Get full text
Journal Article
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
Kaun, Stephen W, Wong, Man Hoi, Mishra, Umesh K, Speck, James S
Published in Semiconductor science and technology (01.07.2013)
Published in Semiconductor science and technology (01.07.2013)
Get full text
Journal Article
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
Jin Chen, Puzyrev, Yevgeniy S., Cher Xuan Zhang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.
Published in IEEE transactions on nuclear science (01.12.2013)
Published in IEEE transactions on nuclear science (01.12.2013)
Get full text
Journal Article
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs
Rong Jiang, En Xia Zhang, McCurdy, Michael W., Jin Chen, Xiao Shen, Pan Wang, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pantelides, Sokrates T.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
Get full text
Journal Article
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
Kaun, Stephen W, Ahmadi, Elaheh, Mazumder, Baishakhi, Wu, Feng, Kyle, Erin C H, Burke, Peter G, Mishra, Umesh K, Speck, James S
Published in Semiconductor science and technology (01.04.2014)
Published in Semiconductor science and technology (01.04.2014)
Get full text
Journal Article
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
Kyle, Erin C.H., Kaun, Stephen W., Wu, Feng, Bonef, Bastien, Speck, James S.
Published in Journal of crystal growth (15.11.2016)
Published in Journal of crystal growth (15.11.2016)
Get full text
Journal Article
Pure AlN layers in metal-polar AlGaN AlN GaN and AlN GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
Kaun, Stephen W, Mazumder, Baishakhi, Fireman, Micha N, Kyle, Erin C H, Mishra, Umesh K, Speck, James S
Published in Semiconductor science and technology (01.05.2015)
Published in Semiconductor science and technology (01.05.2015)
Get full text
Journal Article
Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
Kaun, Stephen W, Wong, Man Hoi, Dasgupta, Sansaptak, Choi, Soojeong, Chung, Roy, Mishra, Umesh K, Speck, James S
Published in Applied physics express (01.02.2011)
Published in Applied physics express (01.02.2011)
Get full text
Journal Article
N-face GaN AlN GaN InAlN and GaN AlN AlGaN GaN InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
Ahmadi, Elaheh, Wu, Feng, Li, Haoran, Kaun, Stephen W, Tahhan, Maher, Hestroffer, Karine, Keller, Stacia, Speck, James S, Mishra, Umesh K
Published in Semiconductor science and technology (01.05.2015)
Published in Semiconductor science and technology (01.05.2015)
Get full text
Journal Article
RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
Jin Chen, En Xia Zhang, Cher Xuan Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.
Published in IEEE transactions on nuclear science (01.12.2014)
Published in IEEE transactions on nuclear science (01.12.2014)
Get full text
Journal Article
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Kaun, Stephen W., Oshima, Yuichi, Short, Dane B., Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
Get full text
Journal Article
Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy” [J. Cryst. Growth 454 (2016) 164–172]
Kyle, Erin C.H., Kaun, Stephen W., Wu, Feng, Bonef, Bastien, Speck, James S.
Published in Journal of crystal growth (01.08.2018)
Published in Journal of crystal growth (01.08.2018)
Get full text
Journal Article
Chlorine-based dry etching of β -Ga 2 O 3
Hogan, Jack E, Kaun, Stephen W, Ahmadi, Elaheh, Oshima, Yuichi, Speck, James S
Published in Semiconductor science and technology (01.06.2016)
Published in Semiconductor science and technology (01.06.2016)
Get full text
Journal Article
Ge doping of β-Ga 2 O 3 films grown by plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Kaun, Stephen W., Oshima, Yuichi, Short, Dane B., Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
Get full text
Journal Article
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
Jiang, Rong, Shen, Xiao, Fang, Jingtian, Wang, Pan, Zhang, En Xia, Chen, Jin, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C.H., Speck, James S., Pantelides, Sokrates T.
Published in IEEE transactions on device and materials reliability (01.09.2018)
Published in IEEE transactions on device and materials reliability (01.09.2018)
Get full text
Magazine Article
COMPOUNDS AND FORMULATIONS FOR PROTECTIVE COATINGS ON PRODUCTS SUCH AS AGRICULTURAL PRODUCTS
ZHANG, Stanley, KAUN, Stephen William, RYAN, Justin, FAUST, Mina, FISHER, David, BAKUS, Ronald C
Year of Publication 17.07.2024
Get full text
Year of Publication 17.07.2024
Patent