nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 [mu]m
Kulikov, V. B, Maslov, D. V, Sabirov, A. R, Solodkov, A. A, Dudin, A. L, Katsavets, N. I, Kogan, I. V
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm
Kulikov, V. B., Maslov, D. V., Sabirov, A. R., Solodkov, A. A., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Shukov, I. V., Chaly, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm
Dudin, A. L., Katsavets, N. I., Krasovitsky, D. M., Kokin, S. V., Chaly, V. P., Shukov, I. V.
Published in Journal of communications technology & electronics (01.03.2018)
Published in Journal of communications technology & electronics (01.03.2018)
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Journal Article
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements
Boltar, K. O., Burlakov, I. D., Vlasov, P. V., Lopukhin, A. A., Chaliy, V. P., Katsavets, N. I.
Published in Journal of communications technology & electronics (01.03.2018)
Published in Journal of communications technology & electronics (01.03.2018)
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Journal Article
Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates
Bel'kov, V.V, Botnaryuk, V.M, Fedorov, L.M, Goncharuk, I.N, Novikov, S.V, Ulin, V.P, Zhilyaev, Yu.V, Cheng, T.S, Jeffs, N.J, Foxon, C.T, Katsavets, N.I, Harrison, I
Published in Journal of crystal growth (01.04.1998)
Published in Journal of crystal growth (01.04.1998)
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Journal Article
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
Katsavets, N. I., Laws, G. M., Harrison, I., Larkins, E. C., Benson, T. M., Cheng, T. S., Foxon, C. T.
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
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Journal Article
Powerful highly stable laser diodes for pumping of solid-state lasers
Demidov, D M, Katsavets, N I, Ter-Martirosyan, A L, Chalyi, V P
Published in Quantum electronics (Woodbury, N.Y.) (30.09.1998)
Published in Quantum electronics (Woodbury, N.Y.) (30.09.1998)
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Journal Article
Highly efficient high-power quasi-continuous diode laser bars for pumping solid-state lasers based on Yb-containing active media
Katsavets, N. I., Buchenkov, V. A., Demidov, D. M., Leus, R. V., Iskandarov, M. O., Nikitichev, A. A., Ter-Martirosyan, A. L.
Published in Technical physics letters (01.01.2004)
Published in Technical physics letters (01.01.2004)
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Journal Article
Standard technologies for microvawe semiconductor electronics based on III-nitrides
Krasovitskiy, D M, Katsavets, N I, Kokin, S V, Filaretov, A G, Chaliy, V P
Published in 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2010)
Published in 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2010)
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Conference Proceeding
High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures
Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2002)
Published in Technical physics letters (01.08.2002)
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Journal Article
100-Watt laser bars based on phase-locked arrays
Demidov, D. M., Ivkin, A. N., Katsavets, N. I., Kokin, S. V., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.
Published in Technical physics letters (01.01.2001)
Published in Technical physics letters (01.01.2001)
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Journal Article
AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors
Butyagin, O. F., Katsavets, N. I., Kogan, I. V., Krasovitsky, D. M., Kulikov, V. B., Chalyi, V. P., Dudin, A. L., Cherednichenko, O. B.
Published in Technical physics letters (01.05.2012)
Published in Technical physics letters (01.05.2012)
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Journal Article
AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ=0.81 μm) and an operating life of 2000 hours
Demidov, D. M., Katsavets, N. I., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.
Published in Technical physics letters (01.04.1997)
Published in Technical physics letters (01.04.1997)
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Journal Article
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)]
Katsavets, N. I., Laws, G. M., Harrison, I., Larkins, E. C., Benson, T. M., Cheng, T. S., Foxon, C. T.
Published in Semiconductors (Woodbury, N.Y.) (01.02.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.02.1999)
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Journal Article
Standard technologies for microvawe electronics: Challenges and prospects
Krasovitsky, D. M., Dudin, A. L., Katsavets, N. I., Kokin, S. V., Filaretov, A. G., Chaliy, V. P.
Published in 2011 21st International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2011)
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Published in 2011 21st International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2011)
Conference Proceeding
Challenges and prospects of A3B5 microvawe foundry
Krasovitsky, D. M., Dudin, A. L., Katsavets, N. I., Kokin, S. V., Filaretov, A. G., Chaly, V. P., Viuginov, V. N.
Published in 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2012)
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Published in 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2012)
Conference Proceeding
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]
Katsavets, N. I., Laws, G. M., Harrison, I., Larkins, E. C., Benson, T. M., Cheng, T. S., Foxon, C. T.
Published in Semiconductors (Woodbury, N.Y.) (01.11.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.11.1998)
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Journal Article
High-power 0.8 mum InGaAsP-GaAs SCH SQW lasers
Garbuzov, D Z, Antonishkis, N Y, Bondarev, A D, Gulakov, A B, Zhigulin, S N, Katsavets, N I, Kochergin, A V, Rafailov, E V
Published in IEEE journal of quantum electronics (01.06.1991)
Published in IEEE journal of quantum electronics (01.06.1991)
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