Progress on and challenges of p-type formation for GaN power devices
Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka
Published in Journal of applied physics (07.09.2020)
Published in Journal of applied physics (07.09.2020)
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Journal Article
Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki
Published in Journal of applied physics (14.03.2020)
Published in Journal of applied physics (14.03.2020)
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Journal Article
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
Kachi, Tetsu, Narita, Tetsuo, Sakurai, Hideki, Matys, Maciej, Kataoka, Keita, Hirukawa, Kazufumi, Sumida, Kensuke, Horita, Masahiro, Ikarashi, Nobuyuki, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun
Published in Journal of applied physics (07.10.2022)
Published in Journal of applied physics (07.10.2022)
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Journal Article
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Kano, Emi, Kataoka, Keita, Uzuhashi, Jun, Chokawa, Kenta, Sakurai, Hideki, Uedono, Akira, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Otsuki, Ritsuo, Kobayashi, Koki, Itoh, Yuta, Nagao, Masahiro, Ohkubo, Tadakatsu, Hono, Kazuhiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki
Published in Journal of applied physics (14.08.2022)
Published in Journal of applied physics (14.08.2022)
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Journal Article
Low resistivity of highly Si-doped n-type Al0.62Ga0.38N layer by suppressing self-compensation
Nagata, Kengo, Makino, Hiroaki, Yamamoto, Taiji, Kataoka, Keita, Narita, Tetsuo, Saito, Yoshiki
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Journal Article
Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN
Kataoka, Keita, Narita, Tetsuo, Iguchi, Hiroko, Uesugi, Tsutomu, Kachi, Tetsu
Published in physica status solidi (b) (01.05.2018)
Published in physica status solidi (b) (01.05.2018)
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Journal Article
Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template
Kataoka, Keita, Narita, Tetsuo, Horibuchi, Kayo, Makino, Hiroaki, Nagata, Kengo, Saito, Yoshiki
Published in Journal of crystal growth (15.03.2020)
Published in Journal of crystal growth (15.03.2020)
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Journal Article
Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Chichibu, Shigefusa F., Shima, Kohei, Uedono, Akira, Ishibashi, Shoji, Iguchi, Hiroko, Narita, Tetsuo, Kataoka, Keita, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Watanabe, Hirotaka, Tanaka, Atsushi, Honda, Yoshio, Suda, Jun, Amano, Hiroshi, Kachi, Tetsu, Nabatame, Toshihide, Irokawa, Yoshihiro, Koide, Yasuo
Published in Journal of applied physics (14.05.2024)
Published in Journal of applied physics (14.05.2024)
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Journal Article
Distinguishing nitrogen‐containing sites in SiO2/4H‐SiC(0001) after nitric oxide annealing by X‐ray absorption spectroscopy
Isomura, Noritake, Kutsuki, Katsuhiro, Kataoka, Keita, Watanabe, Yukihiko, Kimoto, Yasuji
Published in Journal of synchrotron radiation (01.03.2019)
Published in Journal of synchrotron radiation (01.03.2019)
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Journal Article
Growth of high-quality GaN by halogen-free vapor phase epitaxy
Kimura, Taishi, Kataoka, Keita, Uedono, Akira, Amano, Hiroshi, Nakamura, Daisuke
Published in Applied physics express (01.08.2020)
Published in Applied physics express (01.08.2020)
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Journal Article
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
Sakurai, Hideki, Narita, Tetsuo, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Iwinska, Malgorzata, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu
Published in Applied physics express (01.08.2020)
Published in Applied physics express (01.08.2020)
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Journal Article
Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer
Iwata, Kenji, Narita, Tetsuo, Nagao, Masahiro, Tomita, Kazuyoshi, Kataoka, Keita, Kachi, Tetsu, Ikarashi, Nobuyuki
Published in Applied physics express (01.03.2019)
Published in Applied physics express (01.03.2019)
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Journal Article
Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono, Akira, Iguchi, Hiroko, Narita, Tetsuo, Kataoka, Keita, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji
Published in physica status solidi (b) (01.10.2019)
Published in physica status solidi (b) (01.10.2019)
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Journal Article
Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices
Narita, Tetsuo, Tomita, Kazuyoshi, Kataoka, Keita, Tokuda, Yutaka, Kogiso, Tatsuya, Yoshida, Hikaru, Ikarashi, Nobuyuki, Iwata, Kenji, Nagao, Masahiro, Sawada, Naoki, Horita, Masahiro, Suda, Jun, Kachi, Tetsu
Published in Japanese Journal of Applied Physics (01.01.2020)
Published in Japanese Journal of Applied Physics (01.01.2020)
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Journal Article
Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy
Sato, Shunsuke, Kataoka, Keita, Jinnouchi, Ryosuke, Takahashi, Naoko, Sekizawa, Keita, Kitazumi, Kousuke, Ikenaga, Eiji, Asahi, Ryoji, Morikawa, Takeshi
Published in Physical chemistry chemical physics : PCCP (2018)
Published in Physical chemistry chemical physics : PCCP (2018)
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