High thermal stability of doped oxide semiconductor for monolithic 3D integration
Kawai, Hiroki, Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Ishihara, Takamitsu, Ikeda, Keiji
Published in MRS bulletin (01.11.2021)
Published in MRS bulletin (01.11.2021)
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Journal Article
Tungsten/In-Sn-O stacked source/drain electrode structure of In-Ga-Zn-O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Sawabe, Tomoaki, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films
Kuboi, Shuichi, Kataoka, Junji, Iino, Daiki, Kurihara, Kazuaki, Toyoda, Hirotaka, Fukumizu, Hiroyuki
Published in Japanese Journal of Applied Physics (01.08.2024)
Published in Japanese Journal of Applied Physics (01.08.2024)
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Journal Article
Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
Hiwasa, Noboru, Kataoka, Junji, Sasao, Norikatsu, Kuboi, Shuichi, Iino, Daiki, Kurihara, Kazuaki, Fukumizu, Hiroyuki
Published in Applied physics express (01.10.2022)
Published in Applied physics express (01.10.2022)
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Journal Article
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE
UEDA TOMOMASA, ZHENG SHUSHU, SAITO NOBUMI, KATAOKA JUNJI, IKEDA KEIJI
Year of Publication 29.03.2022
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Year of Publication 29.03.2022
Patent
High mobility (>30 cm 2 V −1 s −1 ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m −1 off-state leakage current
Saito, Nobuyoshi, Sawabe, Tomoaki, Kataoka, Junji, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10−20 A m−1 off-state leakage current
Saito, Nobuyoshi, Sawabe, Tomoaki, Kataoka, Junji, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (14.03.2019)
Published in Japanese Journal of Applied Physics (14.03.2019)
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Journal Article
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
SAWABE TOMOAKI, UEDA TOMOMASA, SAITO NOBUMI, KATAOKA JUNJI, IKEDA KEIJI
Year of Publication 24.09.2020
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Year of Publication 24.09.2020
Patent