High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Kashiwano, Masashi, Hirai, Jun, Ikeda, Shunsuke, Fujimatsu, Motohiko, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
InGaAs MOSFET source structures toward high speed/low power applications
Miyamoto, Yasuyuki, Kanazawa, Torn, Yonai, Yoshiharu, Kato, Atsushi, Fujimatsu, Motohiko, Kashiwano, Masashi, Ohsawa, Kazuto, Ohashi, Kazumi
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
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Conference Proceeding