Nitrogen ion implantation isolation technology for normally-off GaN MISFETs on p-GaN substrate
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Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility
Wen, Xinyi, Shankar, Bhawani, Lee, Kwangjae, Kasai, Hayao, Noshin, Maliha, Chun, Jaeyi, Nakazato, Yusuke, Chowdhury, Srabanti
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Published in IEEE electron device letters (01.04.2024)
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SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM
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Year of Publication 13.09.2018
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Year of Publication 13.09.2018
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Normally-off GaN MOSFETs with high-k dielectric CeO2 films deposited by RF sputtering
Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Normally-off GaN MOSFETs with high-k dielectric CeO sub(2) films deposited by RF sputtering
Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Normally‐off GaN MOSFETs with high‐k dielectric CeO 2 films deposited by RF sputtering
Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Semiconductor memory device
Nagao, Osamu, Kasai, Hayao, Honma, Mitsuaki, Sugahara, Akio, Harada, Yoshikazu
Year of Publication 02.04.2019
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Year of Publication 02.04.2019
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SEMICONDUCTOR MEMORY DEVICE
HONMA, Mitsuaki, KASAI, Hayao, HARADA, Yoshikazu, NAGAO, Osamu, SUGAHARA, Akio
Year of Publication 30.08.2018
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Year of Publication 30.08.2018
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