B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator
Karaya, Ryota, Baba, Ikki, Mori, Yosuke, Matsumoto, Tsubasa, Nakajima, Takashi, Tokuda, Norio, Kawae, Takeshi
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
FIELD EFFECT TRANSISTOR USING HYDROGEN-TERMINATED DIAMOND
KAWAE KEN, FURUICHI HIROMIKI, NAKAJIMA TAKAFUMI, TOKUDA NORIO, KARAYA RYOTA
Year of Publication 26.01.2017
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Year of Publication 26.01.2017
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MFS TYPE FIELD EFFECT TRANSISTOR
KAWAE KEN, BABA KAZUKI, NAKAJIMA TAKAFUMI, TOKUDA NORIO, MATSUMOTO TASUKU, KARAYA RYOTA
Year of Publication 04.10.2018
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Year of Publication 04.10.2018
Patent