An ultra high-endurance memristor using back-end-of-line amorphous SiC
Kapur, Omesh, Guo, Dongkai, Reynolds, Jamie, Newbrook, Daniel, Han, Yisong, Beanland, Richard, Jiang, Liudi, de Groot, C. H. Kees, Huang, Ruomeng
Published in Scientific reports (18.06.2024)
Published in Scientific reports (18.06.2024)
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Reservoir computing using back-end-of-line SiC-based memristors
Guo, Dongkai, Kapur, Omesh, Dai, Peng, Han, Yisong, Beanland, Richard, Jiang, Liudi, de Groot, C. H. (Kees), Huang, Ruomeng
Published in Materials advances (30.10.2023)
Published in Materials advances (30.10.2023)
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Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse (Adv. Electron. Mater. 9/2022)
Kapur, Omesh, Guo, Dongkai, Reynolds, Jamie, Han, Yisong, Beanland, Richard, Jiang, Liudi, de Groot, C. H. (Kees), Huang, Ruomeng
Published in Advanced electronic materials (01.09.2022)
Published in Advanced electronic materials (01.09.2022)
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