Raman scattering from acoustic phonons confined in Si nanocrystals
Fujii, M, Kanzawa, Y, Hayashi, S, Yamamoto, K
Published in Physical review. B, Condensed matter (15.09.1996)
Published in Physical review. B, Condensed matter (15.09.1996)
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Journal Article
Photoluminescence of Si-rich SiO2 films : Si clusters as luminescent centers
HAYASHI, S, NAGAREDA, T, KANZAWA, Y, YAMAMOTO, K
Published in Japanese journal of applied physics (01.09.1993)
Published in Japanese journal of applied physics (01.09.1993)
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Journal Article
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
Kusumoto, Osamu, Ohoka, Atsushi, Horikawa, Nobuyuki, Tanaka, Kohtaro, Niwayama, Masahiko, Uchida, Masao, Kanzawa, Yoshihiko, Sawada, Kazuyuki, Ueda, Tetsuzo
Published in Microelectronics and reliability (01.03.2016)
Published in Microelectronics and reliability (01.03.2016)
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Journal Article
Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design
Ohoka, Atsushi, Uchida, Masao, Kiyosawa, Tsutomu, Horikawa, Nobuyuki, Saitou, Kouichi, Kanzawa, Yoshihiko, Sorada, Haruyuki, Sawada, Kazuyuki, Ueda, Tetsuzo
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
SEMICONDUCTOR DEVICE AND CONTROL METHOD FOR THE SAME
OOKA ATSUSHI, KUSUMOTO OSAMU, KANZAWA YOSHIHIKO, UCHIDA MASAO, IWANAGA JUNKO
Year of Publication 08.02.2016
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Year of Publication 08.02.2016
Patent
Epitaxial growth of Si1-x-yGexCy crystals as novel group-IV alloy materials for Si-based electronics
KANZAWA, Yoshihiko, NOZAWA, Katsuya, SAITOH, Tohru, KUBO, Minoru
Published in Oyo Buturi (10.12.2000)
Published in Oyo Buturi (10.12.2000)
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Journal Article
A novel duality-based modeling methodology for reverse current-voltage characteristics of SiC
Yamamoto, Tetsuya, Sawai, Tetsuro, Mizutani, Kenji, Otsuka, Nobuyuki, Fujii, Eiji, Horikawa, Nobuyuki, Kanzawa, Yoshihiko
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
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Conference Proceeding
VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICE, AND METHOD OF FORMING MEMORY CELL
KANZAWA, YOSHIHIKO, SHIMAKAWA, KAZUHIKO, TAKAGI, TAKESHI, MURAOKA, SHUNSAKU
Year of Publication 05.05.2011
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Year of Publication 05.05.2011
Patent
VARIABLE-RESISTANCE NON-VOLATILE MEMORY DEVICE AND WRITE METHOD FOR SAME
IKEDA, YUICHIRO, KANZAWA, YOSHIHIKO, SHIMAKAWA, KAZUHIKO, KATOH, YOSHIKAZU, MURAOKA, SHUNSAKU
Year of Publication 03.02.2011
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Year of Publication 03.02.2011
Patent
RESISTANCE-CHANGE NON-VOLATILE MEMORY DEVICE
KANZAWA, YOSHIHIKO, SHIMAKAWA, KAZUHIKO, AZUMA, RYOTARO, IKEDA, YUUICHIROU, MURAOKA, SHUNSAKU
Year of Publication 21.10.2010
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Year of Publication 21.10.2010
Patent
RESISTANCE-CHANGE NON-VOLATILE MEMORY DEVICE
KANZAWA, YOSHIHIKO, AZUMA, RYOTARO, IIJIMA, MITSUTERU, TAKAGI, TAKESHI, WEI, ZHIQIANG
Year of Publication 30.09.2010
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Year of Publication 30.09.2010
Patent
NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
KANZAWA, YOSHIHIKO, NINOMIYA, TAKEKI, TAKAGI, TAKESHI, MURAOKA, SHUNSAKU, WEI, ZHIQIANG
Year of Publication 10.06.2010
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Year of Publication 10.06.2010
Patent
NONVOLATILE MEMORY ELEMENT
KANZAWA, YOSHIHIKO, MITANI, SATORU, KATAYAMA, KOJI, TAKAGI, TAKESHI, WEI, ZHIQIANG
Year of Publication 10.06.2010
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Year of Publication 10.06.2010
Patent
NON-VOLATILE MEMORY ELEMENT AND NON-VOLATILE SEMICONDUCTOR DEVICE USING THE NON-VOLATILE MEMORY ELEMENT
MITANI SATORU, WEI ZHIQIANG, TAKAGI TAKESHI, KANZAWA YOSHIHIKO, MURAOKA SHUNSAKU
Year of Publication 07.06.2010
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Year of Publication 07.06.2010
Patent