Search Results - "KANG SEUNG HYUK" :: K.UTB vyhledávací portál

by Lim, Hyeokjin, Nallapati, Giridhar, Chava, Bharani, Rim, Kern, Kang, Seung Hyuk, Song, Stanley Seungchul, Vang, Foua, Boynapalli, Venugopal, Sharma, Deepak, Feng, Peijie, Kim, Jonghae, Chidambaram, Periannan
Year of Publication 06.09.2022

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METALLIZATION PROCESS FOR A MEMORY DEVICE

by LU, Yu, KANG, Seung Hyuk
Year of Publication 16.02.2017

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MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING

by Kang, Seung Hyuk, Chen, Wei-Chuan, Kim, Jung Pill
Year of Publication 27.12.2018

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MOS TRANSISTOR OFFSET-CANCELLING DIFFERENTIAL CURRENT-LATCHED SENSE AMPLIFIER

by JUNG, Seong-Ook, KANG, Seung, Hyuk, KIM, Jung Pill, NA, Taehui, SONG, Byung Kyu
Year of Publication 21.10.2020

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ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERPENDICULAR POLARIZER

by KANG, Seung Hyuk, LEE, Kangho, KAN, Jimmy
Year of Publication 09.02.2017

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ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERPENDICULAR POLARIZER

by Lee Kangho, Kan Jimmy, Kang Seung Hyuk
Year of Publication 09.02.2017

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Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications

by Li, Xia, Kang, Seung Hyuk, Chen, Wei-Chuan, Hsu, Wah Nam
Year of Publication 20.10.2020

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Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

by Song, Byungkyu, Kim, Sungryul, Kang, Seung Hyuk, Lim, Sehee, Jung, Seong-Ook
Year of Publication 13.10.2020

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MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance

by Li Xia, Kang Seung Hyuk, Lu Yu
Year of Publication 17.01.2017

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System and method of programming a memory cell

by Li Xia, Kang Seung Hyuk, Zhu Xiaochun
Year of Publication 10.01.2017

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DUAL INTERFACE FREE LAYER WITH AMORPHOUS CAP LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION

by PARK, Chando, KANG, Seung Hyuk, LEE, Kangho
Year of Publication 21.12.2016

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Ferroelectric-modulated Schottky non-volatile memory

by Li, Xia, Xu, Jeffrey Junhao, Kang, Seung Hyuk
Year of Publication 16.10.2018

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Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices

by Park, Chando, Kang, Seung Hyuk, Kan, Jimmy Jianan
Year of Publication 09.10.2018

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Electrically reconfigurable interposer with built-in resistive memory

by Ramachandran Vidhya, Kang Seung Hyuk, Lu Yu
Year of Publication 22.11.2016

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MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EXCHANGE BIAS LAYER(S) FOR INCREASED SENSITIVITY

by Park, Chando, Kang, Seung Hyuk, Wang, Peiyuan, Kan, Jimmy Jianan
Year of Publication 20.09.2018

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A HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (MTJ)

by KANG, SEUNG HYUK, LEE, KANGHO, PARK, CHANDO
Year of Publication 26.10.2016

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