A 70 nm 16 Gb 16-Level-Cell NAND flash Memory
Shibata, N., Maejima, H., Isobe, K., Iwasa, K., Nakagawa, M., Fujiu, M., Shimizu, T., Honma, M., Hoshi, S., Kawaai, T., Kanebako, K., Yoshikawa, S., Tabata, H., Inoue, A., Takahashi, T., Shano, T., Komatsu, Y., Nagaba, K., Kosakai, M., Motohashi, N., Kanazawa, K., Imamiya, K., Nakai, H., Lasser, M., Murin, M., Meir, A., Eyal, A., Shlick, M.
Published in IEEE journal of solid-state circuits (01.04.2008)
Published in IEEE journal of solid-state circuits (01.04.2008)
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Conference Proceeding
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA ERASE CONTROLLING METHOD FOR USE THEREIN
NAKAMURA HIROSHI, SAKUI KOJI, YAMAMURA TOSHIO, SUGIURA YOSHIHISA, KANAZAWA KAZUHISA
Year of Publication 11.07.2001
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Year of Publication 11.07.2001
Patent
A 56-nm CMOS 99-mm2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput
TAKEUCHI, Ken, KAMEDA, Yasushi, IWAI, Makoto, SHIRAKAWA, Masanobu, ICHIGE, Masayuki, HATAKEYAMA, Kazuo, TANAKA, Shinichi, KAMEI, Teruhiko, FU, Jia-Yi, CEMEA, Adi, YAN LI, HIGASHITAM, Masaaki, FUJIMURA, Susumu, HEMINK, Gertjan, SATO, Shinji, OOWADA, Ken, LEE, Shih-Chung, HAYASHIDA, Naoki, JUN WAN, LUTZE, Jeffrey, TSAO, Shouchang, MOFIDI, Mehrdad, SAKURAI, Kiyofumi, OTAKE, Hiroyuki, TOKIWA, Naoya, WAKI, Hiroko, NOZAWA, Yasumitsu, KANAZAWA, Kazuhisa, OHSHIMA, Shigeo, HOSONO, Koji, SHIGA, Hitoshi, WATANABE, Yoshihisa, FUTATSUYAMA, Takuya, SHINDO, Yoshihiko, KOJIMA, Masatsugu
Published in IEEE journal of solid-state circuits (2007)
Published in IEEE journal of solid-state circuits (2007)
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Journal Article
A 56-nm CMOS 99- }^ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput
Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.
Published in IEEE journal of solid-state circuits (01.01.2007)
Published in IEEE journal of solid-state circuits (01.01.2007)
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Journal Article
A 146-mm2 8-Gb multi-level NAND flash memory with 70-nm CMOS technology
HARA, Takahiko, FUKUDA, Koichi, TAKEUCHI, Yoshiaki, AMEMIYA, Kazumi, MOROOKA, Midori, KAMEI, Teruhiko, NASU, Hiroaki, WANG, Chi-Ming, SAKURAI, Kiyofumi, TOKIWA, Naoya, WAKI, Hiroko, MARUYAMA, Tohru, KANAZAWA, Kazuhisa, YOSHIKAWA, Susumu, HIGASHITANI, Masaaki, PHAM, Tuan D, YUPIN FONG, WATANABE, Toshiharu, SHIBATA, Noboru, HOSONO, Koji, MAEJIMA, Hiroshi, NAKAGAWA, Michio, ABE, Takumi, KOJIMA, Masatsugu, FUJIU, Masaki
Published in IEEE journal of solid-state circuits (2006)
Published in IEEE journal of solid-state circuits (2006)
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Journal Article