Search Results - "KAMOHARA, SHIRO" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

by Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in IEEE transactions on electron devices (01.11.2016)

Get full text

Journal Article

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

by Hiramoto, T., Suzuki, M., Song, X., Shimizu, K., Saraya, T., Nishida, A., Tsunomura, T., Kamohara, S., Takeuchi, K., Mogami, T.
Published in IEEE transactions on electron devices (01.08.2011)

Get full text

Journal Article

Application of Piezoelectric PLLA Braided Cord as Wearable Sensor to Realize Monitoring System for Indoor Dogs with Less Physical or Mental Stress

Application of Piezoelectric PLLA Braided Cord as Wearable Sensor to Realize Monitoring System for Indoor Dogs with Less Physical or Mental Stress

by Tajitsu, Yoshiro, Takarada, Jun, Hikichi, Tokiya, Sugii, Ryoji, Takatani, Kohei, Yanagimoto, Hiroki, Nakanishi, Riku, Shiomi, Seita, Kitamoto, Daiki, Nakiri, Takuo, Takeuchi, Osamu, Deguchi, Miki, Muto, Takanori, Kuroki, Kazuaki, Amano, Wataru, Misumi, Ayaka, Takahashi, Mitsuru, Sugiyama, Kazuki, Tanabe, Akira, Kamohara, Shiro, Nisho, Rei, Takeshita, Koji
Published in Micromachines (Basel) (05.01.2023)

Get full text

Journal Article

Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node

Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node

by Kurata, H., Otsuga, K., Kotabe, A., Kajiyama, S., Osabe, T., Sasago, Y., Narumi, S., Tokami, K., Kamohara, S., Tsuchiya, O.
Published in IEEE journal of solid-state circuits (01.06.2007)

Get full text

Journal Article

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

by Maekawa, Keiichi, Makiyama, Hideki, Yamamoto, Yoshiki, Hasegawa, Takumi, Okanishi, Shinobu, Sonoda, Kenichiro, Shinkawata, Hiroki, Yamashita, Tomohiro, Kamohara, Shiro, Yamaguchi, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2018)

Get full text

Journal Article

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

by Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2015)

Get full text

Journal Article

Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

by Putra, Arifin Tamsir, Nishida, Akio, Kamohara, Shiro, Hiramoto, Toshiro
Published in Applied physics express (01.02.2009)

Get full text

Journal Article

A 361nA thermal run-away immune VBB generator using dynamic substrate controlled charge pump for ultra low sleep current logic on 65nm SOTB

A 361nA thermal run-away immune VBB generator using dynamic substrate controlled charge pump for ultra low sleep current logic on 65nm SOTB

by Nagatomi, Hiroki, Sugii, Nobuyuki, Kamohara, Shiro, Ishibashi, Koichiro
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)

Get full text

Conference Proceeding

Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

by Kondo, M., Sugii, N., Hoshino, Y., Hirasawa, W., Kimura, Y., Miyamoto, M., Fujioka, T., Kamohara, S., Kondo, Y., Kimura, S., Yoshida, I.
Published in IEEE transactions on electron devices (01.12.2006)

Get full text

Journal Article

Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors

Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors

by Putra, Arifin Tamsir, Tsunomura, Takaaki, Nishida, Akio, Kamohara, Shiro, Takeuchi, Kiyoshi, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.06.2009)

Get full text

Journal Article

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

by Sakamoto, Toshitsugu, Tada, Munehiro, Tsuji, Yukihide, Makiyama, Hideki, Hasegawa, Takumi, Yamamoto, Yoshiki, Okanishi, Shinobu, Banno, Naoki, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Ogasahara, Yasuhiro, Oda, Hidekazu, Kamohara, Shiro, Yamagata, Yasushi, Sugii, Nobuyuki, Hada, Hiromitsu
Published in Applied physics express (01.04.2015)

Get full text

Journal Article

High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

by Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)

Get full text

Journal Article

Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

by Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Applied physics express (01.11.2010)

Get full text

Journal Article

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

by Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Yamaguchi, Yasuo, Ishibashi, Koichiro, Mizutani, Tomoko, Hiramoto, Toshiro
Published in Journal of Low Power Electronics and Applications (24.04.2014)

Get full text

Journal Article Book Review

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

by Hao Qiu, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)

Get full text

Conference Proceeding Journal Article

Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

by Putra, Arifin Tamsir, Nishida, Akio, Kamohara, Shiro, Tsunomura, Takaaki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2009)

Get full text

Journal Article

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

by Kamohara, Shiro, Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Hasegawa, Takumi, Okanishi, Shinobu, Yanagita, Hiroshi, Kadoshima, Masaru, Maekawa, Keiichi, Mitani, Hitoshi, Yamagata, Yasushi, Oda, Hidekazu, Yamaguchi, Yasuo, Ishibashi, Koichiro, Amano, Hideharu, Usami, Kimiyoshi, Kobayashi, Kazutoshi, Mizutani, Tomoko, Hiramoto, Toshiro
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)

Get full text

Conference Proceeding

Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design

Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design

by Kamohara, Shiro, Kubota, Katsuhiko, Moniwa, Masahiro, Okumura, Tsugunori
Published in Japanese Journal of Applied Physics (01.07.2008)

Get full text

Journal Article

High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

by Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)

Get full text

Journal Article

Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides

Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides

by Kamohara, Shiro, Hu, Chenming, Okumura, Tsugunori
Published in Japanese Journal of Applied Physics (01.08.2008)

Get full text

Journal Article

1
2
3
4
5
6
7
Next
[7]