In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs
Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Sakai, Akira, Tezuka, Tsutomu
Published in Applied physics express (01.10.2014)
Published in Applied physics express (01.10.2014)
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Journal Article
Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu
Published in Applied physics express (01.02.2011)
Published in Applied physics express (01.02.2011)
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Journal Article
(Invited) Ge-on-Insulator MOSFETs for High-Performance and 3D-LSI Applications
Tezuka, Tsutomu, Ikeda, Keiji, Kamata, Yoshiki, Kamimuta, Yuuichi, Usuda, Koji, Moriyama, Yoshihiko, Ono, Mizuki, Koike, Masahiro, Oda, Minoru, Irisawa, Toshifumi, Mieda, Eiko, Maeda, Tatsuro, Jevasuwan, Wipakorn, Kurashima, Yuichi, Takagi, Hideki, Furuse, Kiyoe, Kurosawa, Etsuo
Published in ECS transactions (07.08.2014)
Published in ECS transactions (07.08.2014)
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Journal Article
(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs
Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Usuda, Koji, Oda, Minoru, Irisawa, Toshifumi, Kosemura, Daisuke, Ogura, Atsushi, Tezuka, Tsutomu
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Dielectric Constant Behavior of Hf–O–N System
Ino, Tsunehiro, Kamimuta, Yuuichi, Suzuki, Masamichi, Koyama, Masato, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Suzuki, Masamichi, Koyama, Masato, Tsunashima, Yoshitaka, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.03.2005)
Published in Japanese Journal of Applied Physics (01.03.2005)
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Journal Article
Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
Koyama, Masato, Kamimuta, Yuuichi, Koike, Mitsuo, Suzuki, Masamichi, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation
Ikeda, K., Moriyama, Y., Ono, M., Kamimuta, Y., Irisawa, T., Kamata, Y., Sakai, A., Tezuka, T.
Published in 2012 IEEE International SOI Conference (SOI) (01.10.2012)
Published in 2012 IEEE International SOI Conference (SOI) (01.10.2012)
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Conference Proceeding
Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing
Seki, Harumi, Kamimuta, Yuuichi, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Koyama, Masato, Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property
Fujii, Shosuke, Kamimuta, Yuuichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Saitoh, Masumi
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing
Usuda, Koji, Kamata, Yoshiki, Kamimuta, Yuuichi, Mori, Takahiro, Koike, Masahiro, Tezuka, Tsutomu
Published in Applied physics express (01.05.2014)
Published in Applied physics express (01.05.2014)
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Journal Article
Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors
Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Conference Proceeding
NiGe/n+-Ge junctions with ultralow contact resistivity formed by two-step P-ion implantation
Koike, Masahiro, Kamimuta, Yuuichi, Kurosawa, Etsuo, Tezuka, Tsutomu
Published in Applied physics express (01.05.2014)
Published in Applied physics express (01.05.2014)
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Journal Article
Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers
Moriyama, Yoshihiko, Ikeda, Keiji, Takeuchi, Shotaro, Kamimuta, Yuuichi, Nakamura, Yoshiaki, Izunome, Koji, Sakai, Akira, Tezuka, Tsutomu
Published in Applied physics express (01.08.2014)
Published in Applied physics express (01.08.2014)
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Journal Article
Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory
Yamaguchi, Marina, Fujii, Shosuke, Kamimuta, Yuuichi, Kabuyanagi, Shoichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Ichihara, Reika, Saitoh, Masumi
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
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Conference Proceeding
Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers
Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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Journal Article
Conference Proceeding
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge- nMOSFETs
Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu
Published in Solid-state electronics (01.06.2011)
Published in Solid-state electronics (01.06.2011)
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Journal Article
Conference Proceeding