TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
Kusunoki, Kazuhiko, Ueyama, Tomoyuki, Kawaguchi, Kotaro, Takahashi, Junro, Kamei, Kazuhito
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Solution Growth on Concave Surface of 4H-SiC Crystal
Daikoku, Hironori, Kado, Motohisa, Seki, Akinori, Sato, Kazuaki, Bessho, Takeshi, Kusunoki, Kazuhiko, Kaidou, Hiroshi, Kishida, Yutaka, Moriguchi, Koji, Kamei, Kazuhito
Published in Crystal growth & design (02.03.2016)
Published in Crystal growth & design (02.03.2016)
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Journal Article
Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent
Kusunoki, Kazuhiko, Kamei, Kazuhito, Seki, Kazuaki, Harada, Shunta, Ujihara, Toru
Published in Journal of crystal growth (15.04.2014)
Published in Journal of crystal growth (15.04.2014)
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Journal Article
Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
Kusunoki, Kazuhiko, Okada, Nobuhiro, Kamei, Kazuhito, Moriguchi, Koji, Daikoku, Hironori, Kado, Motohisa, Sakamoto, Hidemitsu, Bessho, Takeshi, Ujihara, Toru
Published in Journal of crystal growth (01.06.2014)
Published in Journal of crystal growth (01.06.2014)
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Journal Article
Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt
Kamei, Kazuhito, Kusunoki, Kazuhiko, Yashiro, Nobuyoshi, Okada, Nobuhiro, Tanaka, Tsutomu, Yauchi, Akihiro
Published in Journal of crystal growth (15.01.2009)
Published in Journal of crystal growth (15.01.2009)
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Conference Proceeding
Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides
Moriguchi, Koji, Kamei, Kazuhito, Kusunoki, Kazuhiko, Yashiro, Nobuyoshi, Okada, Nobuhiro
Published in Journal of materials research (14.01.2013)
Published in Journal of materials research (14.01.2013)
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Journal Article
High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging
Iizuka, Tomonori, Tanaka, Yasunori, Kamei, Kazuhito, Inagaki, Masakazu, Murakawa, Norihiro, Tatsumi, Kohei
Published in 2016 International Symposium on Semiconductor Manufacturing (ISSM) (01.12.2016)
Published in 2016 International Symposium on Semiconductor Manufacturing (ISSM) (01.12.2016)
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Conference Proceeding
Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
Ujihara, Toru, Munetoh, Shinji, Kusunoki, Kazuhiko, Kamei, Kazuhito, Usami, Noritaka, Fujiwara, Kozo, Sazaki, Gen, Nakajima, Kazuo
Published in Thin solid films (01.04.2005)
Published in Thin solid films (01.04.2005)
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Journal Article
Epitaxial growth of a low-density framework form of crystalline silicon: a molecular-dynamics study
Munetoh, S, Moriguchi, K, Kamei, K, Shintani, A, Motooka, T
Published in Physical review letters (21.05.2001)
Published in Physical review letters (21.05.2001)
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Journal Article
Thermodynamic evaluation of the C–Cr–Si, C–Ti–Si, and C–Fe–Si systems for rapid solution growth of SiC
Narumi, Taka, Kawanishi, Sakiko, Yoshikawa, Takeshi, Kusunoki, Kazuhiko, Kamei, Kazuhito, Daikoku, Hironori, Sakamoto, Hidemitsu
Published in Journal of crystal growth (15.12.2014)
Published in Journal of crystal growth (15.12.2014)
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Journal Article
Analysis of local lattice strain around oxygen precipitates in silicon crystals using CBED technique
Yonemura, Mitsuharu, Sueoka, Koji, Kamei, Kazuhito
Published in Applied surface science (01.06.1998)
Published in Applied surface science (01.06.1998)
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Journal Article
Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application
Tatsumi, Kohei, Inagaki, Masakazu, Kamei, Kazuhito, Iizuka, Tomonori, Narimatsu, Hiroaki, Sato, Nobuaki, Shimizu, Koji, Ueda, Kazutoshi, Imakiire, Akihiro, Hikita, Masayuki, Kamimura, Rikiya, Sugiura, Kazuhiko, Tsuruta, Kazuhiro, Toda, Keiji
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01.05.2017)
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01.05.2017)
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Conference Proceeding