Diffusion and segregation of carbon in SiO2 films
MIZUSHIMA, I, KAMIYA, E, KASHIWAGI, M, ARAI, N, SONODA, M, YOSHIKI, M, TAKAGI, S.-I, WAKAMIYA, M, KAMBAYASHI, S, MIKATA, Y, MORI, S.-I
Published in Japanese journal of applied physics (1997)
Published in Japanese journal of applied physics (1997)
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Conference Proceeding
Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
Yoshimi, M., Hazama, H., Takahashi, M., Kambayashi, S., Wada, T., Tango, H.
Published in IEEE transactions on electron devices (01.03.1989)
Published in IEEE transactions on electron devices (01.03.1989)
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Journal Article
Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
Yoshimi, M., Takahashi, M., Wada, T., Kato, K., Kambayashi, S., Kemmochi, M., Natori, K.
Published in IEEE transactions on electron devices (01.09.1990)
Published in IEEE transactions on electron devices (01.09.1990)
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Journal Article
Diffusion and Segregation of Carbon in SiO 2 Films
Mizushima, Ichiro, Kamiya, Eiji, Arai, Norihisa, Sonoda, Masahisa, Yoshiki, Masahiko, Takagi, Shin-ichi, Wakamiya, Mikio, Kambayashi, Shigeru, Mikata, Yuichi, Kashiwagi, Sei-ichi Mori
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Journal Article
Method of manufacturing a semiconductor device with oxide mediated epitaxial layer
Mizushima, Ichiro, Mitani, Yuichiro, Kambayashi, Shigeru, Miyano, Kiyotaka
Year of Publication 28.05.2002
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Year of Publication 28.05.2002
Patent
Method of manufacturing a semiconductor device with oxide mediated epitaxial layer
MITANI YUICHIRO, MIYANO KIYOTAKA, KAMBAYASHI SHIGERU, MIZUSHIMA ICHIRO
Year of Publication 28.05.2002
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Year of Publication 28.05.2002
Patent
Semiconductor device and method of manufacturing the same
MITANI YUICHIRO, MIYANO KIYOTAKA, KAMBAYASHI SHIGERU, MIZUSHIMA ICHIRO
Year of Publication 21.03.2002
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Year of Publication 21.03.2002
Patent
Semiconductor device and method of manufacturing the same
Mitani, Yuichiro, Mizushima, Ichiro, Kambayashi, Shigeru, Miyano, Kiyotaka
Year of Publication 21.03.2002
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Year of Publication 21.03.2002
Patent
Semiconductor device with oxide mediated epitaxial layer
Mizushima, Ichiro, Mitani, Yuichiro, Kambayashi, Shigeru, Miyano, Kiyotaka
Year of Publication 12.02.2002
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Year of Publication 12.02.2002
Patent
Semiconductor device with oxide mediated epitaxial layer
MITANI YUICHIRO, MIYANO KIYOTAKA, KAMBAYASHI SHIGERU, MIZUSHIMA ICHIRO
Year of Publication 12.02.2002
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Year of Publication 12.02.2002
Patent
Semiconductor device and manufacturing method thereof
Mitani, Yuichiro, Mizushima, Ichiro, Kambayashi, Shigeru, Nishino, Hirotaka, Kashiwagi, Masahiro
Year of Publication 29.01.2002
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Year of Publication 29.01.2002
Patent
Semiconductor device and manufacturing method thereof
MITANI YUICHIRO, KAMBAYASHI SHIGERU, NISHINO HIROTAKA, MIZUSHIMA ICHIRO, KASHIWAGI MASAHIRO
Year of Publication 29.01.2002
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Year of Publication 29.01.2002
Patent
Semiconductor device with element isolation film
MIZUSHIMA; ICHIRO, KAMBAYASHI; SHIGERU, KUNISHIMA; IWAO, KASHIWAGI; MASAHIRO, MITANI; YUICHIRO
Year of Publication 25.01.2000
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Year of Publication 25.01.2000
Patent
Semiconductor device and manufacturing method thereof
MIZUSHIMA; ICHIRO, KAMBAYASHI; SHIGERU, KASHIWAGI; MASAHIRO, NISHINO; HIROTAKA, MITANI; YUICHIRO
Year of Publication 26.01.1999
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Year of Publication 26.01.1999
Patent