Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs
Kadoshima, M., Matsuki, T., Miyazaki, S., Shiraishi, K., Chikyo, T., Yamada, K., Aoyama, T., Nara, Y., Ohji, Y.
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
Changes in effective work function of HfxRu1-x alloy gate electrode
NABATAME, T, NUNOSHIGE, Y, KADOSHIMA, M, TAKABA, H, SEGAWA, K, KIMURA, S, SATAKE, H, OTA, H, OHISHI, T, TORIUMI, A
Published in Microelectronic engineering (01.07.2008)
Published in Microelectronic engineering (01.07.2008)
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Journal Article
Advantages of HfAlON gate dielectric film for advanced low power CMOS application
Toriumi, A., Iwamoto, K., Ota, H., Kadoshima, M., Mizubayashi, W., Nabatame, T., Ogawa, A., Tominaga, K., Horikawa, T., Satake, H.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
NABATAME, T, SEGAWA, K, KADOSHIMA, M, TAKABA, H, IWAMOTO, K, KIMURA, S, NUNOSHIGE, Y, SATAKE, H, OHISHI, T, TORIUMI, Akira
Published in Materials science in semiconductor processing (01.12.2006)
Published in Materials science in semiconductor processing (01.12.2006)
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Conference Proceeding
Journal Article
Rutile-type TiO2 thin film for high-k gate insulator
KADOSHIMA, Masaru, HIRATANI, Masahiko, SHIMAMOTO, Yasuhiro, TORII, Kazuyoshi, MIKI, Hiroshi, KIMURA, Shinichiro, NABATAME, Toshihide
Published in Thin solid films (31.01.2003)
Published in Thin solid films (31.01.2003)
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Journal Article
Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs
Kadoshima, M, Matsuki, T, Miyazaki, S, Shiraishi, K, Chikyo, T, Yamada, K, Aoyama, T, Nara, Y, Ohji, Y
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
Changes in effective work function of Hf x Ru 1− x alloy gate electrode
Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T., Toriumi, A.
Published in Microelectronic engineering (2008)
Published in Microelectronic engineering (2008)
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Journal Article
Ultra-thin titanium oxide film with a rutile-type structure
Hiratani, Masahiko, Kadoshima, Masaru, Hirano, Tatsumi, Shimamoto, Yasuhiro, Matsui, Yuichi, Nabatame, Toshihide, Torii, Kazuyoshi, Kimura, Shinichiro
Published in Applied surface science (28.02.2003)
Published in Applied surface science (28.02.2003)
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Journal Article
Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics
Sato, M., Umezawa, N., Mise, N., Kamiyama, S., Kadoshima, M., Morooka, T., Adachi, T., Chikyow, T., Yamabe, K., Shiraishi, K., Miyazaki, S., Uedono, A., Yamada, K., Aoyama, T., Eimori, T., Nara, Y., Ohji, Y.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS
Kadoshima, M., Sugita, Y., Shiraishi, K., Watanabe, H., Ohta, A., Miyazaki, S., Nakajima, K., Chikyow, T., Yamada, K., Aminaka, T., Kurosawa, E., Matsuki, T., Aoyama, T., Nara, Y., Ohji, Y.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
Impact of area scaling on threshold voltage lowering in La-containing high-k/metal gate NMOSFETs fabricated on (100) and (110)Si
Inoue, M., Satoh, Y., Kadoshima, M., Sakashita, S., Kawahara, T., Anma, M., Nakagawa, R., Umeda, H., Matsuyama, S., Fujimoto, H., Miyatake, H.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Photoemission Study of Metal/HfSiON Gate Stack
Miyazaki, Seiichi, Yoshinaga, Hiromichi, Ohta, Akio, Akasaka, Yasushi, Shiraishi, Kenji, Yamada, Keisaku, Inumiya, Seiji, Kadoshima, Masaru, Nara, Yasuo
Published in ECS transactions (09.05.2008)
Published in ECS transactions (09.05.2008)
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Journal Article
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO 2 stack structure
Nabatame, T., Segawa, K, Kadoshima, M., Takaba, H., Iwamoto, K., Kimura, S., Nunoshige, Y., Satake, H., Ohishi, T., Toriumi, Akira
Published in Materials science in semiconductor processing (2006)
Published in Materials science in semiconductor processing (2006)
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Journal Article
Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators
Ota, Hiroyuki, Ogawa, Arito, Kadoshima, Masaru, Iwamoto, Kunihiko, Okada, Kenji, Satake, Hideki, Nabatame, Toshihide, Toriumi, Akira
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Improved FET characteristics by laminate design optimization of metal gates - Guidelines for optimizing metal gate stack structure
Kadoshima, M., Matsuki, T., Mise, N., Sato, M., Hayashi, M., Aminaka, T., Kurosawa, E., Kitajima, M., Miyazaki, S., Shiraishi, K., Chikyo, T., Yamada, K., Aoyama, T., Nara, Y., Ohji, Y.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics
Shiraishi, Kenji, Akasaka, Yasushi, Nakamura, Genji, Kadoshima, Masaru, Ohta, Akio, Miyazaki, Seiichi, Watanabe, Heiji, Ohmori, Kenji, Chikyow, Toyohiro, Yamabe, Kikuo, Nara, Yasuo, Ohji, Yuxuru, Yamada, Keisaku
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
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Journal Article
Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes
Kadoshima, Masaru, Sugita, Yoshihiro, Shiraishi, Kenji, Watanabe, Heiji, Ohta, Akio, Miyazaki, Seiichi, Nakajima, Kiyomi, Chikyow, Toyohiro, Yamada, Keisaku, Aminaka, Toshio, Kurosawa, Etsuo, Matsuki, Takeo, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuxuru
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
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Journal Article
Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes
Kadoshima, Masaru, Nabatame, Toshihide, Takahashi, Masashi, Ogawa, Arito, Iwamoto, Kunihiko, Mizubayashi, Wataru, Ota, Hiroyuki, Satake, Hideki, Toriumi, Akira
Published in ECS transactions (07.07.2006)
Published in ECS transactions (07.07.2006)
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Journal Article
Two Different Mechanisms for Determining Effective Work Function (fm,eff) on High-k - Physical Understanding and Wider Tunability of fm,eff
Kadoshima, M., Ogawa, A., Ota, H., Ikeda, M., Takahashi, M., Satake, H., Nabatame, T., Toriumi, A.
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
Reliability and scalability of FinFET split-gate MONOS array with tight Vth distribution for 16/14nm-node embedded flash
Tsuda, S., Saito, T., Nagase, H., Kawashima, Y., Yoshitomi, A., Okanishi, S., Hayashi, T., Maruyama, T., Inoue, M., Muranaka, S., Kato, S., Hagiwara, T., Saito, H., Yamaguchi, T., Kadoshima, M., Mihara, T., Yanagita, H., Sonoda, K., Yamashita, T., Yamaguchi, Y.
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding