Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (07.04.2015)
Published in Japanese Journal of Applied Physics (07.04.2015)
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Journal Article
Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface
Bu, Yuan, Kitamoto, Akira, Takatsu, Hiroaki, Juta, Masami, Sumi, Tomoaki, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (07.03.2014)
Published in Applied physics express (07.03.2014)
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Journal Article
Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Homoepitaxial growth of a -plane GaN layers by reaction between Ga 2 O vapor and NH 3 gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
Get full text
Journal Article
Homoepitaxial growth of a-plane GaN layers by reaction between Ga sub(2) O vapor and NH sub(3) gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
Get full text
Journal Article
Growth of GaN layers using Ga 2 O vapor obtained from Ga and H 2 O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2015)
Published in Japanese Journal of Applied Physics (01.05.2015)
Get full text
Journal Article
Growth of GaN layers using Ga sub(2) O vapor obtained from Ga and H sub(2) O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2015)
Published in Japanese Journal of Applied Physics (01.05.2015)
Get full text
Journal Article
Dramatic increase in the growth rate of GaN layers grown from Ga 2 O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface
Bu, Yuan, Kitamoto, Akira, Takatsu, Hiroaki, Juta, Masami, Sumi, Tomoaki, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (01.03.2014)
Published in Applied physics express (01.03.2014)
Get full text
Journal Article