Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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Journal Article
Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method
Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.03.2022)
Published in Journal of crystal growth (01.03.2022)
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Journal Article
Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.09.2021)
Published in Japanese Journal of Applied Physics (01.09.2021)
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Journal Article
Influence of oxygen-related defects on the electronic structure of GaN
Ohata, Satoshi, Kawamura, Takahiro, Akiyama, Toru, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Sumi, Tomoaki, Takino, Junichi
Published in Japanese Journal of Applied Physics (01.06.2022)
Published in Japanese Journal of Applied Physics (01.06.2022)
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Journal Article
Effect of methane additive on GaN growth using the OVPE method
Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Presence of glyceraldehyde-derived advanced glycation end-products in the liver of insulin-resistant mice
Ebata, Yu, Takino, Junichi, Tsuchiya, Hiroyuki, Sakabe, Tomohiko, Ikeda, Yoshito, Hama, Susumu, Kogure, Kentaro, Takeuchi, Masayoshi, Shiota, Goshi
Published in International journal for vitamin and nutrition research (01.04.2013)
Published in International journal for vitamin and nutrition research (01.04.2013)
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Journal Article
Origin of Black Color in Heavily Doped n‐Type GaN Crystal
Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in physica status solidi (b) (16.03.2024)
Published in physica status solidi (b) (16.03.2024)
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Journal Article
Polyethylene Glycol Accelerates Loop-mediated Isothermal Amplification (LAMP) Reaction
Nose, Kenta, Nagamine, Kentaro, Tokuda, Junichi, Takino, Junichi, Hori, Takamitsu
Published in Yakugaku zasshi (01.10.2013)
Published in Yakugaku zasshi (01.10.2013)
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Journal Article
Group-III nitride substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 30.07.2024
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Year of Publication 30.07.2024
Patent
Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate
Matsuno, Shunichi, Hoteida, Masayuki, Yoshimura, Masashi, Usami, Shigeyoshi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 23.01.2024
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Year of Publication 23.01.2024
Patent
Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)
Matsuno, Shunichi, Yoshimura, Masashi, Usami, Shigeyoshi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 02.01.2024
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Year of Publication 02.01.2024
Patent