Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd
Published in Proceedings of the IEEE (01.06.2017)
Published in Proceedings of the IEEE (01.06.2017)
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Journal Article
Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator
Pham, A.-T.., Jungemann, C.., Meinerzhagen, B..
Published in IEEE transactions on electron devices (01.09.2007)
Published in IEEE transactions on electron devices (01.09.2007)
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Journal Article
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
Tyaginov, S.E., Starkov, I.A., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch, Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
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Journal Article
Conference Proceeding
Impact ionization MOS (I-MOS)-Part II: experimental results
Gopalakrishnan, K., Woo, R., Jungemann, C., Griffin, P.B., Plummer, J.D.
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
Failure of moments-based transport models in nanoscale devices near equilibrium
Jungemann, C., Grasser, T., Neinhuus, B., Meinerzhagen, B.
Published in IEEE transactions on electron devices (01.11.2005)
Published in IEEE transactions on electron devices (01.11.2005)
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Journal Article
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
Jungemann, C., Pham, A.-T., Hong, S.-M., Smith, L., Meinerzhagen, B.
Published in Solid-state electronics (01.06.2013)
Published in Solid-state electronics (01.06.2013)
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Journal Article
Conference Proceeding
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Pham, A.T., Jungemann, C., Klawitter, M., Meinerzhagen, B.
Published in Solid-state electronics (01.10.2008)
Published in Solid-state electronics (01.10.2008)
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Journal Article
Conference Proceeding
High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs
Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A.-T., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K.C.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Conference Proceeding
Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation
Sasso, G, Rinaldi, N, Matz, G, Jungemann, C
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
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Conference Proceeding
Investigation of compact models for RF noise in SiGe HBTs by hydrodynamic device simulation
Jungemann, C., Neinhus, B., Meinerzhagen, B., Dutton, R.W.
Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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Journal Article
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current
Pham, A T, Jungemann, C, Meinerzhagen, B
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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Conference Proceeding