On the SiO2-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 [mu]m CMOS logic technology
Lin, Yo-Sheng, Huang, Huan-Tsung, Wu, Chung-Cheng, Leung, Ying-Keung, Pan, Hsu-Yang, Chang, Tse-En, Chen, Wei-Ming, Liaw, Jung-Jih, Diaz, C.H
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
Get full text
Journal Article
On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 /spl mu/m CMOS logic technology
Yo-Sheng Lin, Huan-Tsung Huang, Chung-Cheng Wu, Ying-Keung Leung, Hsu-Yang Pan, Tse-En Chang, Wei-Ming Chen, Jung-Jih Liaw, Diaz, C.H.
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
Get full text
Journal Article
On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology
Yo-Sheng Lin, Huan-Tsung Huang, Chung-Cheng Wu, Ying-Keung Leung, Hsu-Yang Pan, Tse-En Chang, Wei-Ming Chen, Jung-Jih Liaw, Diaz, C.H.
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
Get full text
Journal Article
On the SiO(2)-based gate-dielectric scaling limit forlow-standby power applications in the context of a 0.13 mu m CMOS logictechnology
Lin, Yo-Sheng, Huang, Huan-Tsung, Wu, Chung-Cheng, Leung, Ying-Keung, Pan, Hsu-Yang, Chang, Tse-En, Chen, Wei-Ming, Liaw, Jung-Jih, Diaz, C H
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
Get full text
Journal Article
On the SiO sub(2)-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 mu m CMOS logic technology
Lin, Yo-Sheng, Huang, Huan-Tsung, Wu, Chung-Cheng, Leung, Ying-Keung, Pan, Hsu-Yang, Chang, Tse-En, Chen, Wei-Ming, Liaw, Jung-Jih, Diaz, CH
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
Get full text
Journal Article