Modeling of [Formula Omitted] Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
Get full text
Journal Article
Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
JUNG, Sang-Goo, LEE, Keun-Woo, KIM, Ki-Seog, SHIN, Seung-Woo, LEE, Seaung-Suk, OM, Jae-Chul, BAE, Gi-Hyun, LEE, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
Get full text
Journal Article
Modeling of V Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
Get full text
Journal Article
Modeling of [V_{rm th}] Shift in @@inand@ Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
Get full text
Journal Article