Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)
Kang, D.H., Kim, J.S., Kim, Y.R., Kim, Y.T., Lee, M.K., Jun, Y.J., Park, J.H., Yeung, F., Jeong, C.W., Yu, J., Kong, J.H., Ha, D.W., Song, S.A., Park, J., Park, Y.H., Song, Y.J., Eum, C.Y., Ryoo, K.C., Shin, J.M., Lim, D.W., Park, S.S., Kim, J.H., Park, W.I., Sim, K.R., Cheong, J.H., Oh, J.H., Kim, J.I., Oh, Y.T., Lee, K.W., Koh, S.P., Eun, S.H., Kim, N.B., Koh, G.H., Jeong, G.T., Jeong, H.S., Kim, Kinam
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Get full text
Conference Proceeding