Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation
Rozé, Fabien, Gourhant, Olivier, Blanquet, Elisabeth, Bertin, François, Juhel, Marc, Abbate, Francesco, Pribat, Clément, Duru, Romain
Published in Journal of applied physics (28.06.2017)
Published in Journal of applied physics (28.06.2017)
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Journal Article
Atomic scale investigation of arsenic segregation in high-k metal gate stacks
Estivill, Robert, Juhel, Marc, Gregoire, Magali, Grenier, Adeline, Delaye, Vincent, Blavette, Didier
Published in Scripta materialia (01.03.2016)
Published in Scripta materialia (01.03.2016)
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Journal Article
3D Atomic Scale Analysis of CMOS type structures for 14 nm UTBB-SOI technology
Estivill, Robert, Grenier, Adeline, Printemps, Tony, Juhel, Marc, Gregoire, Magali, Caubet, Pierre, Blavette, Didier
Published in Microscopy and microanalysis (01.08.2015)
Published in Microscopy and microanalysis (01.08.2015)
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Journal Article
Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
Caubet, Pierre, Blomberg, Tom, Benaboud, Rym, Wyon, Christophe, Blanquet, Elisabeth, Gonchond, Jean-Pierre, Juhel, Marc, Bouvet, Philippe, Gros-Jean, Mickaël, Michailos, Jean, Richard, Claire, Iteprat, Blaise
Published in Journal of the Electrochemical Society (2008)
Published in Journal of the Electrochemical Society (2008)
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Journal Article
Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation
Rozé, Fabien, Gourhant, Olivier, Blanquet, Elisabeth, Bertin, François, Juhel, Marc, Abbate, Francesco, Pribat, Clement, Duru, Romain
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
Low resistivity tungsten for contact metallization
Smith, Steven, Aouadi, Khaled, Collins, Josh, van der Vegt, Eric, Basso, Marie-Thérese, Juhel, Marc, Pokrant, Simone
Published in Microelectronic engineering (01.12.2005)
Published in Microelectronic engineering (01.12.2005)
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Journal Article
Conference Proceeding
Highly Microcrystalline Phosphorous‐Doped Si:H Very Thin Films Deposited by RF‐PECVD
Wilson, Alestair, Fourmond, Erwann, Saidi, Bilel, Fornacciari, Benjamin, Brottet, Solène, Juhel, Marc, Gros-Jean, Mickael
Published in Physica status solidi. A, Applications and materials science (01.07.2022)
Published in Physica status solidi. A, Applications and materials science (01.07.2022)
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Journal Article
Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy
Vives, Jeremy, Verdier, Stephane, Deprat, Fabien, Frauenrath, Marvin, Duru, Romain, Juhel, Marc, Berthome, Gregory, Chaussende, Didier
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (06.07.2023)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (06.07.2023)
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Journal Article
Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process
Lachal, Laurent, Nemouchi, Fabrice, Mazen, Frederic, Rodriguez, Philippe, Gregoire, Magali, Ghegin, Elodie, Milesi, Frederic, Coig, Marianne, Borrel, Julien, Joblot, Sylvain, Juhel, Marc
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
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Conference Proceeding
Investigation of Arsenic Transient Enhanced Diffusion From Emitter Process at 550 °C Si:As RP-CVD Epitaxy Using Disilane Precursor
Deprat, Fabien, Vives, Jérémy, Juhel, Marc, Valery, Alexia, Lespiaux, Justine, Baron, Alain, Brezza, Edoardo, Gauthier, Alexis
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10at.% Pt) film with Si(100) substrate
Panciera, Federico, Mangelinck, Dominique, Hoummada, Khalid, Texier, Michaël, Bertoglio, Maxime, De Luca, Anthony, Gregoire, Magali, Juhel, Marc
Published in Scripta materialia (01.05.2014)
Published in Scripta materialia (01.05.2014)
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Journal Article
Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers
Lespiaux, Justine, Deprat, Fabien, Vives, Jérémy, Duru, Romain, Bicer, Mehmet, Gauthier, Alexis, Brezza, Edoardo, Juhel, Marc, Chenevas-Paule, Florence, Baron, Alain, Valery, Alexia, Hartmann, Jean-Michel
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
Atomic Scale Analysis of Dopants in CMOS Structures by Atom Probe Tomography
Martin, Isabelle, Estivill, Robert, Juhel, Marc, Grenier, Adeline, Prosa, Ty J., Larson, David J.
Published in Microscopy and microanalysis (01.07.2016)
Published in Microscopy and microanalysis (01.07.2016)
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Journal Article
Moisture Diffusion in Dense SiO2 and Ultra Low k Integrated Stacks
Cartailler, Vivien, Moulard, Jean Baptiste, Pin, Marie-Astrid, Duchamp, Genevieve, Fremont, Helene, Imbert, Gregory, Guyader, Veronique, Juhel, Marc, Lamontagne, Patrick, Rafik, Mustapha, Ney, David, Benoit, Daniel, Chaton, Catherine
Published in 2019 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2019)
Published in 2019 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2019)
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Conference Proceeding
Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation
Labrot, Maxime, Cheynis, Fabien, Barge, David, Juhel, Marc, Müller, Pierre
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS
Estivill, Robert, Chevalier, Pascal, Lorut, Frederic, Juhel, Marc, Clement, Laurent, Servanton, Germain, Avenier, Gregory, Grenier, Adeline, Blavette, Didier
Published in Microscopy and microanalysis (01.08.2015)
Published in Microscopy and microanalysis (01.08.2015)
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Journal Article
An analysis of trace metal contaminants on silicon surface by VPD-ToF-SIMS and VPD-SIMS: towards 1E6-1E7at/cm2 detection limits
Juhel, Marc, Trouiller, Chantal, Guiheux, Denis, Arsac, Cyril, Drogue, Nathalie, Couvrat, Stephanie, Grosjean, Catherine
Published in Surface and interface analysis (01.01.2011)
Published in Surface and interface analysis (01.01.2011)
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Journal Article
An analyis of trace metal contaminants on silicon surface by VPD‐ToF‐SIMS and VPD‐SIMS: towards 1E6‐1E7at/cm 2 detection limits
Juhel, Marc, Trouiller, Chantal, Guiheux, Denis, Arsac, Cyril, Drogue, Nathalie, Couvrat, Stephanie, Grosjean, Catherine
Published in Surface and interface analysis (01.01.2011)
Published in Surface and interface analysis (01.01.2011)
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Journal Article
An analyis of trace metal contaminants on silicon surface by VPD-ToF-SIMS and VPD-SIMS: towards 1E6-1E7at/cm2 detection limits
Juhel, Marc, Trouiller, Chantal, Guiheux, Denis, Arsac, Cyril, Drogue, Nathalie, Couvrat, Stephanie, Grosjean, Catherine
Published in Surface and interface analysis (01.01.2011)
Published in Surface and interface analysis (01.01.2011)
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Journal Article