Simulation Study of Dominant Statistical Variability Sources in 32-nm High- \kappa/Metal Gate CMOS
Xingsheng Wang, Roy, G., Saxod, O., Bajolet, A., Juge, A., Asenov, A.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description
Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
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Journal Article
Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET
Valentin, R., Bertrand, G., Puget, S., Scheer, P., Juge, A., Jaouen, H., Raynaud, C.
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling
Pradeep, Krishna, Scheer, Patrick, Poiroux, Thierry, Juge, André, Ghibaudo, Gérard
Published in Semiconductor science and technology (01.05.2020)
Published in Semiconductor science and technology (01.05.2020)
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Journal Article
Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Test structures for interdie variations monitoring in presence of statistical random variability
Castaneda, G., Juge, A., Ghibaudo, G., Golanski, D., Hoguet, D., Portal, J., Borot, B.
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
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Conference Proceeding
Modeling of Doping Effects in Surface Potential Based Compact Model of Fully Depleted SOI MOSFET
Martinie, Sebastien, Rozeau, Olivier, Kolev, Plamen, Scheer, Patrick, Ghouli, Salim El, Juge, Andre, Lee, Harrison, Poiroux, Thierry
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
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Conference Proceeding
Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI
Pradeep, Krishna, Gouget, Gilles, Poiroux, Thierry, Scheer, Patrick, Juge, Andre, Ghibaudo, Gerard
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
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Conference Proceeding
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
Paz, Bruna Cardoso, Cassé, Mikaël, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Arnaud, Franck, Ghibaudo, Gérard, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Published in Solid-state electronics (01.12.2021)
Published in Solid-state electronics (01.12.2021)
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Journal Article
RF performances at cryogenic temperature of inductors integrated in a FDSOI technology
Berlingard, Quentin, Lugo-Alvarez, Jose, Contamin, Lauriane, Durand, Cédric, Galy, Philippe, Juge, Andre, De Franceschi, Silvano, Vinet, Maud, Meunier, Tristan, Cassé, Mikaël, Gaillard, Fred
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K
Contamin, Lauriane, Casse, Mikael, Garros, Xavier, Gaillard, Fred, Vinet, Maud, Galy, Philippe, Juge, Andre, Vincent, Emmanuel, de Franceschi, Silvano, Meunier, Tristan
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology
Martinie, Sebastien, Rozeau, Olivier, Poiroux, Thierry, Scheer, Patrick, Ghouli, Salim El, Kang, Mihyun, Juge, Andre, Lee, Harrison
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications
Paz, Bruna Cardoso, Guevel, Loick Le, Casse, Mikael, Billiot, Gerard, Pillonnet, Gael, Jansen, Aloysius, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Ghibaudo, Gerard, Vinet, Maud, Franceschi, Silvano de, Meunier, Tristan, Gaillard, Fred
Published in 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) (01.05.2020)
Published in 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) (01.05.2020)
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Conference Proceeding
Modeling of MOSFET parasitic capacitances, and their impact on circuit performance
Mueller, Judith, Thoma, Rainer, Demircan, Ertugrul, Bernicot, Christophe, Juge, Andre
Published in Solid-state electronics (01.11.2007)
Published in Solid-state electronics (01.11.2007)
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Journal Article
Conference Proceeding
New physical insight for analog application in PSP bulk compact model
Martinie, Sebastien, Rozeau, Olivier, Poiroux, Thierry, Barbe, Jean-Charles, Gilibert, Fabien, Montagner, Xavier, Ghouli, Salim El, Juge, Andre, Geert Smit, D. J., Scholten, Andries J.
Published in 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2018)
Published in 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2018)
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Conference Proceeding
Chip-package interactions: Some combined package effects on copper/low-k interconnect delaminations
Fiori, V., Gallois-Garreignot, S., Tavernier, C., Jaouen, H., Juge, A.
Published in 2008 2nd Electronics System-Integration Technology Conference (01.09.2008)
Published in 2008 2nd Electronics System-Integration Technology Conference (01.09.2008)
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Conference Proceeding