In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling
Pradeep, Krishna, Scheer, Patrick, Poiroux, Thierry, Juge, André, Ghibaudo, Gérard
Published in Semiconductor science and technology (01.05.2020)
Published in Semiconductor science and technology (01.05.2020)
Get full text
Journal Article
Modeling of Doping Effects in Surface Potential Based Compact Model of Fully Depleted SOI MOSFET
Martinie, Sebastien, Rozeau, Olivier, Kolev, Plamen, Scheer, Patrick, Ghouli, Salim El, Juge, Andre, Lee, Harrison, Poiroux, Thierry
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
Get full text
Conference Proceeding
Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI
Pradeep, Krishna, Gouget, Gilles, Poiroux, Thierry, Scheer, Patrick, Juge, Andre, Ghibaudo, Gerard
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
Get full text
Conference Proceeding
Simulation Study of Dominant Statistical Variability Sources in 32-nm High- \kappa/Metal Gate CMOS
Xingsheng Wang, Roy, G., Saxod, O., Bajolet, A., Juge, A., Asenov, A.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
Get full text
Journal Article
Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
Get full text
Journal Article
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description
Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
Get full text
Journal Article
Sensitivity analysis of C-V global variability for 28 nm FD-SOI
Pradeep, Krishna, Poiroux, Thierry, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Ghibaudo, Gerard
Published in 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01.04.2017)
Published in 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01.04.2017)
Get full text
Conference Proceeding
Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA
Ghouli, Salim El, Grabinski, Wladyslaw, Sallese, Jean Michel, Juge, Andre, Lallement, Christophe
Published in 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) (01.06.2018)
Published in 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) (01.06.2018)
Get full text
Conference Proceeding
Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model
El Ghouli, Salim, Scheer, Patrick, Minondo, Michel, Juge, Andre, Poiroux, Thierry, Sallese, Jean Michel, Lallement, Christophe
Published in 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems (01.06.2016)
Published in 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems (01.06.2016)
Get full text
Conference Proceeding
Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET
Valentin, R., Bertrand, G., Puget, S., Scheer, P., Juge, A., Jaouen, H., Raynaud, C.
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
Get full text
Journal Article
Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs
Rideau, D., Uhring, W., Bianchi, R. A., Helleboid, R., Mugny, G., Grebot, J., Manouvrier, J.R., Neri, R., Brun, F., Lakeh, M. Dolatpoor, Rink, S., Kammerer, J-B., Lallement, C., Lacombe, E., Golanski, D., Rae, B., Bah, T. M., Twaddle, F., Quenette, V., Marchand, G., Buj, C., Fillon, R., Henrion, Y., Nicholson, I., Agnew, M., Basset, M., Perrier, R., Al-Rawhani, M., Mamdy, B., Pellegrin, S., Gouget, G., Maciazek, P., Juge, A., Dartigues, A., Alause, H. Wehbe
Published in ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (11.09.2023)
Published in ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (11.09.2023)
Get full text
Conference Proceeding
Test structures for interdie variations monitoring in presence of statistical random variability
Castaneda, G., Juge, A., Ghibaudo, G., Golanski, D., Hoguet, D., Portal, J., Borot, B.
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
Get full text
Conference Proceeding
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
Paz, Bruna Cardoso, Cassé, Mikaël, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Arnaud, Franck, Ghibaudo, Gérard, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Published in Solid-state electronics (01.12.2021)
Published in Solid-state electronics (01.12.2021)
Get full text
Journal Article
RF performances at cryogenic temperature of inductors integrated in a FDSOI technology
Berlingard, Quentin, Lugo-Alvarez, Jose, Contamin, Lauriane, Durand, Cédric, Galy, Philippe, Juge, Andre, De Franceschi, Silvano, Vinet, Maud, Meunier, Tristan, Cassé, Mikaël, Gaillard, Fred
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
Get full text
Journal Article
Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
Get full text
Journal Article
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K
Contamin, Lauriane, Casse, Mikael, Garros, Xavier, Gaillard, Fred, Vinet, Maud, Galy, Philippe, Juge, Andre, Vincent, Emmanuel, de Franceschi, Silvano, Meunier, Tristan
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Get full text
Conference Proceeding
L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology
Martinie, Sebastien, Rozeau, Olivier, Poiroux, Thierry, Scheer, Patrick, Ghouli, Salim El, Kang, Mihyun, Juge, Andre, Lee, Harrison
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Get full text
Conference Proceeding