An electrically modifiable synapse array of resistive switching memory
Choi, Hyejung, Jung, Heesoo, Lee, Joonmyoung, Yoon, Jaesik, Park, Jubong, Seong, Dong-jun, Lee, Wootae, Hasan, Musarrat, Jung, Gun-Young, Hwang, Hyunsang
Published in Nanotechnology (26.08.2009)
Published in Nanotechnology (26.08.2009)
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Journal Article
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
Kim, Seonghyun, Park, Jubong, Woo, Jiyong, Cho, Chunhum, Lee, Wootae, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Lee, Byoung Hun, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2013)
Published in Microelectronic engineering (01.07.2013)
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Journal Article
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Seo, Kyungah, Kim, Insung, Jung, Seungjae, Jo, Minseok, Park, Sangsu, Park, Jubong, Shin, Jungho, Biju, Kuyyadi P, Kong, Jaemin, Lee, Kwanghee, Lee, Byounghun, Hwang, Hyunsang
Published in Nanotechnology (24.06.2011)
Published in Nanotechnology (24.06.2011)
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Journal Article
Investigation of State Stability of Low-Resistance State in Resistive Memory
Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
Improved Switching Variability and Stability by Activating a Single Conductive Filament
PARK, Jubong, JUNG, Seungjae, LEE, Wootae, KIM, Seonghyun, SHIN, Jungho, LEE, Daeseok, WOO, Jiyong, HWANG, Hyunsang
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect
PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang
Published in IEEE electron device letters (01.01.2011)
Published in IEEE electron device letters (01.01.2011)
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Journal Article
Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM
SHIN, Jungho, PARK, Jubong, LEE, Joonmyoung, PARK, Sangsu, KIM, Seonghyun, LEE, Wootae, KIM, Insung, LEE, Daeseok, HWANG, Hyunsang
Published in IEEE electron device letters (01.07.2011)
Published in IEEE electron device letters (01.07.2011)
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Journal Article
Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications
LEE, Wootae, PARK, Jubong, SON, Myungwoo, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang
Published in IEEE electron device letters (01.05.2011)
Published in IEEE electron device letters (01.05.2011)
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Journal Article
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang
Published in IEEE electron device letters (01.04.2012)
Published in IEEE electron device letters (01.04.2012)
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Journal Article
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
Wootae Lee, Jubong Park, Jungho Shin, Jiyong Woo, Seonghyun Kim, Choi, G., Seungjae Jung, Sangsu Park, Daeseok Lee, Euijun Cha, Hyung Dong Lee, Soo Gil Kim, Chung, S., Hyunsang Hwang
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
MIM-type cell selector for high-density and low-power cross-point memory application
Shin, Jungho, Choi, Godeuni, Woo, Jiyong, Park, Jubong, Park, Sangsu, Lee, Wootae, Kim, Seonghyun, Son, Myungwoo, Hwang, Hyunsang
Published in Microelectronic engineering (01.05.2012)
Published in Microelectronic engineering (01.05.2012)
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Journal Article
New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory
PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament
Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang
Published in Microelectronic engineering (01.06.2011)
Published in Microelectronic engineering (01.06.2011)
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Journal Article
Noise-Analysis-Based Model of Filamentary Switching ReRAM With \hbox/\hbox Stacks
Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Siddik, M., Hyunsang Hwang
Published in IEEE electron device letters (01.07.2011)
Published in IEEE electron device letters (01.07.2011)
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Journal Article
Co-Occurrence of Threshold Switching and Memory Switching in \hbox/\hbox/\hbox Cells for Crosspoint Memory Applications
Xinjun Liu, Sadaf, Sharif Md, Myungwoo Son, Jubong Park, Jungho Shin, Wootae Lee, Kyungah Seo, Daeseok Lee, Hyunsang Hwang
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Excellent Selector Characteristics of Nanoscale \hbox for High-Density Bipolar ReRAM Applications
Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory
Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Proton Irradiation Effects on Resistive Random Access Memory With ZrO /HfO Stacks
Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, Biju, K. P., Minhyeok Choe, Takhee Lee, Hyunsang Hwang
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Self-Selective Characteristics of Nanoscale \hbox Devices for High-Density ReRAM Applications
Myungwoo Son, Xinjun Liu, Sadaf, S. M., Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, Hyunsang Hwang
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Multibit Operation of \hbox -Based ReRAM by Schottky Barrier Height Engineering
Jubong Park, Biju, K P, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang
Published in IEEE electron device letters (01.04.2011)
Published in IEEE electron device letters (01.04.2011)
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