Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)
Kim, Hansung, Yeu, In Won, Han, Gyuseung, Ju, Gunwu, Lee, Yun Joong, Shin, Young-hun, Choi, Jung-Hae, Koo, Hyun Cheol, Kim, Hyung-jun
Published in Journal of alloys and compounds (05.09.2021)
Published in Journal of alloys and compounds (05.09.2021)
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Journal Article
Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates
Shim, Jae-Phil, Kim, Han-Sung, Ju, Gunwu, Lim, Hyeong-Rak, Kim, Seong Kwang, Han, Jae-Hoon, Kim, Hyung-Jun, Kim, Sang-Hyeon
Published in IEEE transactions on electron devices (01.03.2018)
Published in IEEE transactions on electron devices (01.03.2018)
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Journal Article
Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si
Shim, Jae-Phil, Kim, Seong Kwang, Kim, Hansung, Ju, Gunwu, Lim, Heejeong, Kim, SangHyeon, Kim, Hyung-jun
Published in APL materials (01.01.2018)
Published in APL materials (01.01.2018)
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Journal Article
Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials
Kim, Sang-Hyeon, Lee, Subin, Kim, Ho-Sung, Bidenko, Pavlo, Kang, Chang-Mo, Lee, Dong-Seon, Song, Jin-Dong, Choi, Won Jun, Kim, Hyung-Jun, Kim, Seong-Kwang, Shim, Jae-Phil, Geum, Dae-Myeong, Ju, Gunwu, Kim, Han-Sung, Lim, Hee-Jeong, Lim, Hyeong-Rak, Han, Jae-Hoon
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Kim, Sanghyeon, Song, Jin Dong, Alam, M. A., Kim, Hyung-Jun, Kim, Seong Kwang, Shin, Sanghoon, Han, Jae-Hoon, Geum, Dae-Myeong, Shim, Jae-Phil, Lee, Subin, Kim, Hansung, Ju, Gunwu
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
Baek, Ji-Min, Kim, Hyo-Jin, Yoo, Ji-Hoon, Shin, Ju-Won, Shin, Ki-Yong, Amir, Walid, Ju, Gunwu, Kim, Hyung-Jun, Oh, Joohee, Kim, Hyoungsub, Kim, Tae-Woo, Kim, Dae-Hyun
Published in Solid-state electronics (01.11.2022)
Published in Solid-state electronics (01.11.2022)
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Journal Article
Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
Baek, Ji-Min, Kim, Hyo-Jin, Yoo, Ji-Hoon, Shin, Ju-Won, Shin, Ki-Yong, Amir, Walid, Ju, Gunwu, Kim, Hyung-Jun, Oh, Joohee, Kim, Hyoungsub, Kim, Tae-Woo, Kim, Dae-Hyun
Published in Solid-state electronics (01.11.2022)
Published in Solid-state electronics (01.11.2022)
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Journal Article
Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates
Ju, Gunwu, Kim, Hansung, Shim, Jae-Phil, Kim, Seong Kwang, Lee, Byeong-hyeon, Won, Sung Ok, Kim, Sanghyeon, Kim, Hyung-jun
Published in Thin solid films (01.03.2018)
Published in Thin solid films (01.03.2018)
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Journal Article
Suppressing nonradiative recombination in crown-shaped quantum wells
Ju, Gunwu, Na, Byung Hoon, Park, Kwangwook, Hwang, Hyeong-Yong, Jho, Young-Dahl, Myoung, NoSoung, Yim, Sang-Youp, Kim, Hyung-jun, Lee, Yong Tak
Published in Japanese Journal of Applied Physics (01.03.2018)
Published in Japanese Journal of Applied Physics (01.03.2018)
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Journal Article
Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs
Kim, SangHyeon, Kim, Seong Kwang, Shin, SangHoon, Han, Jae-Hoon, Geum, Dae-Myeong, Shim, Jae-Phil, Lee, Subin, Kim, Han Sung, Ju, Gunwu, Song, Jin Dong, Alam, Muhammad A., Kim, Hyung-jun
Published in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2018)
Published in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2018)
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Conference Proceeding
Heterogeneous integration toward monolithic 3D chip
Kim, SangHyeon, Kim, Seong-Kwang, Shim, Jae-Phil, Geum, Dae-myeong, Ju, Gunwu, Kim, Han Sung, Lim, Hee Jung, Lim, Hyeong Rak, Han, Jae-Hoon, Kang, ChangMo, Lee, Dong Seon, Song, Jin Dong, Choi, Won Jun, Kim, Hyung-jun
Published in 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2017)
Published in 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2017)
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Conference Proceeding
Optical device including three-coupled quantum well structure
Park Changyoung, Ju Gunwu, Lee Yongtak, Cho Yongchul, Na Byunghoon, Park Yonghwa
Year of Publication 12.12.2017
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Year of Publication 12.12.2017
Patent
OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE
JU GUNWU, LEE YONGTAK, NA BYUNGHOON, CHO YONGCHUL, PARK CHANGYOUNG, PARK YONGHWA
Year of Publication 08.10.2015
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Year of Publication 08.10.2015
Patent
Optical device including three-coupled quantum well structure
LEE, YONGTAK, NA, BYUNGHOON, PARK, CHANGYOUNG, PARK, YONGHWA, CHO, YONGCHUL, JU, GUNWU
Year of Publication 07.10.2015
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Year of Publication 07.10.2015
Patent