Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
Bae, Jong-Ho, Kwon, Daewoong, Jeon, Namho, Cheema, Suraj, Tan, Ava Jiang, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.11.2020)
Published in IEEE electron device letters (01.11.2020)
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Journal Article
High-Density and Near-Linear Synaptic Device Based on a Reconfigurable Gated Schottky Diode
Bae, Jong-Ho, Lim, Suhwan, Park, Byung-Gook, Lee, Jong-Ho
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs
Hoffmann, Michael, Tan, Ava Jiang, Shanker, Nirmaan, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.05.2022)
Published in IEEE electron device letters (01.05.2022)
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Journal Article
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy
Shin, Wonjun, Min, Kyung Kyu, Bae, Jong-Ho, Yim, Jiyong, Kwon, Dongseok, Kim, Yeonwoo, Yu, Junsu, Hwang, Joon, Park, Byung-Gook, Kwon, Daewoong, Lee, Jong-Ho
Published in Nanoscale (10.02.2022)
Published in Nanoscale (10.02.2022)
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Journal Article
Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor- and FET-type gas sensors
Shin, Wonjun, Jung, Gyuweon, Hong, Seongbin, Jeong, Yujeong, Park, Jinwoo, Kim, Donghee, Jang, Dongkyu, Kwon, Dongseok, Bae, Jong-Ho, Park, Byung-Gook, Lee, Jong-Ho
Published in Nanoscale (14.10.2020)
Published in Nanoscale (14.10.2020)
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Journal Article
Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs
Yang, Ga Won, Park, Jingyu, Choi, Sungju, Kim, Changwook, Kim, Dong Myong, Choi, Sung-Jin, Bae, Jong-Ho, Cho, Il Hwan, Kim, Dae Hwan
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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Journal Article
Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives
Shin, Wonjun, Bae, Jong-Ho, Kwon, Dongseok, Koo, Ryun-Han, Park, Byung-Gook, Kwon, Daewoong, Lee, Jong-Ho
Published in IEEE electron device letters (01.06.2022)
Published in IEEE electron device letters (01.06.2022)
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Journal Article
Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel
Lee, Kitae, Bae, Jong-Ho, Kim, Sihyun, Lee, Jong-Ho, Park, Byung-Gook, Kwon, Daewoong
Published in IEEE electron device letters (01.08.2020)
Published in IEEE electron device letters (01.08.2020)
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Journal Article
Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics
Hoffmann, Michael, Tan, Ava Jiang, Shanker, Nirmaan, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.12.2022)
Published in IEEE electron device letters (01.12.2022)
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Journal Article
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell
Lee, Seongwon, Kim, Haesung, Yang, Hyojin, Yun, Sanghyuk, Park, Junseong, Lee, Haneul, Park, Sejun, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong, Kwon, Daewoong, Bae, Jong-Ho
Published in IEEE electron device letters (01.04.2024)
Published in IEEE electron device letters (01.04.2024)
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Journal Article
Adaptive Weight Quantization Method for Nonlinear Synaptic Devices
Kwon, Dongseok, Lim, Suhwan, Bae, Jong-Ho, Lee, Sung-Tae, Kim, Hyeongsu, Kim, Chul-Heung, Park, Byung-Gook, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature
Hong, Seongbin, Shin, Jongmin, Hong, Yoonki, Wu, Meile, Jang, Dongkyu, Jeong, Yujeong, Jung, Gyuweon, Bae, Jong-Ho, Jang, Ho Won, Lee, Jong-Ho
Published in Nanoscale (01.01.2018)
Published in Nanoscale (01.01.2018)
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Journal Article
Reconfigurable Field-Effect Transistor as a Synaptic Device for XNOR Binary Neural Network
Bae, Jong-Ho, Kim, Hyeongsu, Kwon, Dongseok, Lim, Suhwan, Lee, Sung-Tae, Park, Byung-Gook, Lee, Jong-Ho
Published in IEEE electron device letters (01.04.2019)
Published in IEEE electron device letters (01.04.2019)
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Journal Article
Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications
Shin, Dong Hyeop, Myoung, Seung Joo, Kim, Donguk, Kim, Changwook, Bae, Jong-Ho, Choi, Sung-Jin, Kim, Dong Myong, Woo, Jiyong, Kim, Dae Hwan
Published in Ceramics international (15.08.2024)
Published in Ceramics international (15.08.2024)
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Journal Article
Demonstration of Pulse Width Modulation Function using Single Positive Feedback Device for Neuron
Woo, Sung Yun, Kwon, Dongseok, Park, Byung-Gook, Lee, Jong-Ho, Bae, Jong-Ho
Published in IEEE electron device letters (01.01.2023)
Published in IEEE electron device letters (01.01.2023)
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Journal Article
Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes
Kwon, Dongseok, Shin, Wonjun, Bae, Jong-Ho, Lim, Suhwan, Park, Byung-Gook, Lee, Jong-Ho
Published in IEEE electron device letters (01.03.2021)
Published in IEEE electron device letters (01.03.2021)
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Journal Article
Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature
Lee, Sangwon, Park, Jingyu, Yang, Ga Won, Kim, Changwook, Choi, Sung-Jin, Kim, Dong Myong, Bae, Jong-Ho, Kim, Dae Hwan
Published in IEEE electron device letters (01.01.2023)
Published in IEEE electron device letters (01.01.2023)
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Journal Article