Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime
Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae
Published in ETRI journal (09.12.2019)
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Published in ETRI journal (09.12.2019)
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Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD
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Published in Materials (03.07.2021)
Published in Materials (03.07.2021)
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Journal Article
Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime
Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won‐Jun, Jung, Jongwan, Cho, Seongjae
Published in ETRI journal (01.12.2019)
Published in ETRI journal (01.12.2019)
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Apparatus for Manufacturing Semiconductor And Method of Operating The Same
LEE, HO YOUNG, JOH, YONG SANG, JANG, WOOK SANG, JEON, JE HOON, KAM, BYUNG MIN
Year of Publication 20.03.2017
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Year of Publication 20.03.2017
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APPARATUS FOR PROCESSING SUBSTRATE
LEE, HO YOUNG, MOON, JIN YOUNG, JOH, YONG SANG, PARK, SANG JUN, ROH, TAI WON, JANG, WOOK SANG
Year of Publication 03.08.2015
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Year of Publication 03.08.2015
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