A 32-Mb chain FeRAM with segment/stitch array architecture
Shiratake, S., Miyakawa, T., Takeuchi, Y., Ogiwara, R., Kamoshida, M., Hoya, K., Oikawa, K., Ozaki, T., Kunishima, I., Yamakawa, K., Sugimoto, S., Takashima, D., Joachim, H.-O., Rehm, N., Wohlfahrt, J., Nagel, N., Beitel, G., Jacob, M., Roehr, T.
Published in IEEE journal of solid-state circuits (01.11.2003)
Published in IEEE journal of solid-state circuits (01.11.2003)
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Journal Article
A method for the prediction of hot-carrier lifetime in floating SOI NMOSFETs
Maeda, S., Yamaguchi, Y., Il-Jung Kim, Joachim, H.-O., Inoue, Y., Miyoshi, H., Yasuoka, A.
Published in IEEE transactions on electron devices (01.12.1997)
Published in IEEE transactions on electron devices (01.12.1997)
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Journal Article
Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure
Yamaguchi, Y., Iwamatsu, T., Joachim, H.-O., Oda, H., Inoue, Y., Nishimura, T., Tsukamoto, K.
Published in IEEE transactions on electron devices (01.07.1994)
Published in IEEE transactions on electron devices (01.07.1994)
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Journal Article
New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor
Nagel, N., Bruchhaus, R., Hornik, K., Egger, U., Zhuang, H., Joachim, H.-O., Rohr, T., Beitel, G., Ozaki, T., Kunishima, I.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding
Comparison of standard and low-dose separation-by-implanted-oxygen substrates for 0.15 μm SOI MOSFET applications
JOACHIM, H.-O, YAMAGUCHI, Y, FUJINO, T, KATO, T, INOUE, Y, HIRAO, T
Published in Japanese journal of applied physics (01.02.1996)
Published in Japanese journal of applied physics (01.02.1996)
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Conference Proceeding
Analytical modeling of short-channel behavior of accumulation-mode transistors on silicon-on-insulator substrate
JOACHIM, H.-O, YAMAGUCHI, Y, INOUE, Y, NISHIMURA, T, TSUBOUCHI, N
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Conference Proceeding
Journal Article
Two-dimensional analytical modeling of the source/drain engineering influence of short-channel effects in SOI MOSFET's
JOACHIM, H.-O, YAMAGUCHI, Y, INOUE, Y, TSUBOUCHI, N
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Conference Proceeding
Journal Article
A 32Mb chain FeRAM with segment/stitch array architecture
Shiratake, S., Miyakawa, T., Takeuchi, Y., Ogiwara, R., Kamoshida, M., Hoya, K., Oikawa, K., Ozaki, T., Kunishima, I., Yamakawa, K., Sugimoto, S., Takashima, D., Joachim, H.O., Rehm, N., Wohlfahrt, J., Nagel, N., Beitel, G., Jacob, M., Roehr, T.
Published in 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC (2003)
Published in 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC (2003)
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Conference Proceeding