Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
Tai, Chia‐Tse, Chiu, Po‐Yuan, Liu, Chia‐You, Kao, Hsiang‐Shun, Harris, C. Thomas, Lu, Tzu‐Ming, Hsieh, Chi‐Ti, Chang, Shu‐Wei, Li, Jiun‐Yun
Published in Advanced materials (Weinheim) (01.07.2021)
Published in Advanced materials (Weinheim) (01.07.2021)
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Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain
Chuang, Yen, Liu, Chia-You, Luo, Guang-Li, Li, Jiun-Yun
Published in IEEE electron device letters (01.01.2021)
Published in IEEE electron device letters (01.01.2021)
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Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Hae Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, Yoo, Jinkyoung
Published in APL materials (01.11.2022)
Published in APL materials (01.11.2022)
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Tunable Electrodeposition of Ni Electrocatalysts onto Si Microwires Array for Photoelectrochemical Water Oxidation
Tung, Ching‐Wei, Chuang, Yen, Chen, Hsiao‐Chien, Chan, Ting‐Shan, Li, Jiun‐Yun, Chen, Hao Ming
Published in Particle & particle systems characterization (01.01.2018)
Published in Particle & particle systems characterization (01.01.2018)
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Widely Tunable Monolithic Mid-Infrared Quantum Cascade Lasers Using Super-Structure Grating Reflectors
Guo, Dingkai, Li, Jiun-Yun, Cheng, Liwei, Chen, Xing, Worchesky, Terry, Choa, Fow-Sen
Published in Photonics (01.06.2016)
Published in Photonics (01.06.2016)
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Journal Article
Single and double hole quantum dots in strained Ge/SiGe quantum wells
Hardy, Will J, Harris, C Thomas, Su, Yi-Hsin, Chuang, Yen, Moussa, Jonathan, Maurer, Leon N, Li, Jiun-Yun, Lu, Tzu-Ming, Luhman, Dwight R
Published in Nanotechnology (14.03.2019)
Published in Nanotechnology (14.03.2019)
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Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
Su, Yi-Hsin, Chou, Kuan-Yu, Chuang, Yen, Lu, Tzu-Ming, Li, Jiun-Yun
Published in Journal of applied physics (21.06.2019)
Published in Journal of applied physics (21.06.2019)
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Journal Article
Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure
Hsu, Nai-Wen, Hou, Wei-Chih, Chen, Yen-Yang, Wu, Yu-Jui, Kao, Hsiang-Shun, Harris, Charles Thomas, Lu, Tzu-Ming, Li, Jiun-Yun
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls
Hou, Wei-Chih, Shih, Pao-Chuan, Lin, Hao-Hsiung, Wu, Barry Bing-Ruey, Li, Jiun-Yun
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
Chang, Shu-Wei, Lu, Tsung-Han, Yang, Cong-Yi, Yeh, Cheng-Jui, Huang, Min-Kun, Meng, Ching-Fan, Chen, Po-Jen, Chang, Ting-Hsuan, Chang, Yan-Shiuan, Jhu, Jhe-Wei, Hong, Tzu-Chieh, Ke, Chu-Chu, Yu, Xin-Ren, Lu, Wen-Hsiang, Baig, Mohammed Aftab, Cho, Ta-Chun, Sung, Po-Jung, Su, Chun-Jung, Hsueh, Fu-Kuo, Chen, Bo-Yuan, Hu, Hsin-Hui, Wu, Chien-Ting, Lin, Kun-Lin, Ma, William Cheng-Yu, Lu, Darsen D., Kao, Kuo-Hsing, Lee, Yao-Jen, Lin, Cheng-Li, Huang, Kun-Ping, Chen, Kun-Ming, Li, Yiming, Samukawa, Seiji, Chao, Tien-Sheng, Huang, Guo-Wei, Wu, Wen-Fa, Lee, Wen-Hsi, Li, Jiun-Yun, Shieh, Jia-Min, Tarng, Jenn-Hwan, Wang, Yeong-Her, Yeh, Wen-Kuan
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation
Chuang, Yen, Liu, Chia-You, Kao, Hsiang-Shun, Tien, Kai-Ying, Luo, Guang-Li, Li, Jiun-Yun
Published in ACS applied electronic materials (23.03.2021)
Published in ACS applied electronic materials (23.03.2021)
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