Search Results - "Jing Zhuge, Jing Zhuge" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

by Runsheng Wang, Runsheng Wang, Jing Zhuge, Jing Zhuge, Ru Huang, Ru Huang, Yu Tian, Yu Tian, Han Xiao, Han Xiao, Liangliang Zhang, Liangliang Zhang, Chen Li, Chen Li, Xing Zhang, Xing Zhang, Yangyuan Wang, Yangyuan Wang
Published in IEEE transactions on electron devices (01.06.2007)

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Journal Article

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

by Wang, Runsheng, Liu, Hongwei, Huang, Ru, Zhuge, Jing, Zhang, Liangliang, Kim, Dong-Won, Zhang, Xing, Park, Donggun, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.11.2008)

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Journal Article

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications

by Zhuge, Jing, Wang, Runsheng, Huang, Ru, Zhang, Xing, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.08.2008)

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Journal Article

Stable supercapacitor electrode based on two-dimensional high nucleus silver nano-clusters as a green energy source

Stable supercapacitor electrode based on two-dimensional high nucleus silver nano-clusters as a green energy source

by Zhuge, Jing, Rouhani, Farzaneh, Bigdeli, Fahime, Gao, Xue-Mei, Kaviani, Hamed, Li, Hong-Jing, Wang, Wei, Hu, Mao-Lin, Liu, Kuan-Guan, Morsali, Ali
Published in Dalton transactions : an international journal of inorganic chemistry (21.02.2021)

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Journal Article

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

by Xu, Xiaoyan, Wang, Runsheng, Huang, Ru, Zhuge, Jing, Chen, Gang, Zhang, Xing, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.11.2008)

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Journal Article

Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

by Wang, Runsheng, Zhuge, Jing, Huang, Ru, Yu, Tao, Zou, Jibin, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.08.2011)

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Journal Article

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

by Zhuge, Jing, Wang, Runsheng, Huang, Ru, Tian, Yu, Zhang, Liangliang, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan
Published in IEEE electron device letters (01.01.2009)

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Journal Article

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

by Yu, Tao, Wang, Runsheng, Huang, Ru, Chen, Jiang, Zhuge, Jing, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.11.2010)

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Journal Article

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

by Zhuge, Jing, Verhulst, Anne S, Vandenberghe, William G, Dehaene, Wim, Huang, Ru, Wang, Yangyuan, Groeseneken, Guido
Published in Semiconductor science and technology (01.08.2011)

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Journal Article

Investigation of Thermal Noise in UTB GOI and SOI Devices

Investigation of Thermal Noise in UTB GOI and SOI Devices

by Pei, Yunpeng, Huang, Ru, An, Xia, Zhuge, Jing, Li, Xiaodong, Xiao, Han, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.05.2008)

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Journal Article

Design Optimization for Digital Circuits Built With Gate-All-Around Silicon Nanowire Transistors

Design Optimization for Digital Circuits Built With Gate-All-Around Silicon Nanowire Transistors

by Yuchao Liu, Ru Huang, Runsheng Wang, Jing Zhuge, Qiumin Xu, Yangyuan Wang
Published in IEEE transactions on electron devices (01.07.2012)

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Journal Article

Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations

Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations

by Huang, Ru, Zou, Jibin, Wang, Runsheng, Fan, Chunhui, Ai, Yujie, Zhuge, Jing, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.10.2011)

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Journal Article

Influence of color coatings on aircraft surface ice detection based on multi-wavelength imaging

Influence of color coatings on aircraft surface ice detection based on multi-wavelength imaging

by 诸葛晶昌于之靖高建树郑大川
Published in Optoelectronics letters (01.03.2016)

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Journal Article

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

by Wang, Runsheng, Zhuge, Jing, Huang, Ru, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan
Published in IEEE electron device letters (01.05.2009)

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Journal Article

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors

by Huang, Ru, Wang, Runsheng, Liu, Changze, Zhang, Liangliang, Zhuge, Jing, Tao, Yu, Zou, Jibin, Liu, Yuchao, Wang, Yangyuan
Published in Microelectronics and reliability (01.09.2011)

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Journal Article Conference Proceeding

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate From Top-Down Approach: Simulation and Fabrication

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate From Top-Down Approach: Simulation and Fabrication

by Zhuge, Jing, Tian, Yu, Wang, Runsheng, Huang, Ru, Wang, Yiqun, Chen, Baoqin, Liu, Jia, Zhang, Xing, Wang, Yangyuan
Published in IEEE transactions on nanotechnology (01.01.2010)

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Journal Article

Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

by Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang
Published in 2011 IEEE Custom Integrated Circuits Conference (CICC) (01.09.2011)

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Conference Proceeding

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

by Zhang, Liangliang, Liu, Changze, Wang, Runsheng, Huang, Ru, Yu, Tao, Zhuge, Jing, Kirsch, Paul, Tseng, Hsing-Huang, Wang, Yangyuan
Published in Jpn J Appl Phys (01.04.2010)

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Journal Article

A comparative study on analog/RF performance of UTB GOI and SOI devices

A comparative study on analog/RF performance of UTB GOI and SOI devices

by Zhuge, Jing, An, Xia, Huang, Ru, Xiao, Han, Hou, Xiaoyu, Wang, Runsheng, Wang, Yangyuan
Published in Semiconductor science and technology (01.07.2008)

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Journal Article

Impacts of Land-Use Change on Ecosystem Services Value in the South-to-North Water Diversion Project, China

Impacts of Land-Use Change on Ecosystem Services Value in the South-to-North Water Diversion Project, China

by Zhuge, Jing, Zeng, Jie, Chen, Wanxu, Zhang, Chi
Published in International journal of environmental research and public health (13.03.2023)

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Journal Article