12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications
Chang, Jonathan, Yen-Huei Chen, Wei-Min Chan, Singh, Sahil Preet, Cheng, Hank, Fujiwara, Hidehiro, Jih-Yu Lin, Kao-Cheng Lin, Hung, John, Lee, Robin, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
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