Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources
Zhan, Xuepeng, Zhao, Guoqing, Yu, Xiaolin, Chen, Bo, Chen, Jiezhi
Published in Nanotechnology (27.08.2021)
Published in Nanotechnology (27.08.2021)
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Journal Article
Van der Waals Heterostructure Contact Strategy for Barrier‐Free 2D Complementary Transistors
Sang, Pengpeng, Wang, Qianwen, Wang, Hai, Wu, Jixuan, Zhan, Xuepeng, Li, Dechun, Chen, Jiezhi
Published in Advanced functional materials (24.09.2024)
Published in Advanced functional materials (24.09.2024)
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Journal Article
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash
Xie, Kenie, Guo, Pena, Chen, Fei, Chen, Binglu, Fang, Xiaotong, Wu, Jixuan, Zhan, Xuepeng, Chen, Jiezhi
Published in 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (28.10.2022)
Published in 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (28.10.2022)
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Conference Proceeding
Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing
Chen, Bo, Wang, Chengcheng, Zhan, Xuepeng, Wu, Shuhao, Tai, Lu, Mei, Junyao, Wu, Jixuan, Chen, Jiezhi
Published in Nanotechnology (10.12.2023)
Published in Nanotechnology (10.12.2023)
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Journal Article
Organic steep-slope nano-FETs: A rational design based on two-dimensional covalent-organic frameworks
Gong, Xiangxin, Xu, Lijun, Sang, Pengpeng, Li, Yuan, Chen, Jiezhi
Published in Organic electronics (01.01.2022)
Published in Organic electronics (01.01.2022)
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Journal Article
Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions
Fan, Zhi-Qiang, Chen, Jiezhi, Jiang, Xiangwei
Published in Journal of physics. D, Applied physics (22.08.2018)
Published in Journal of physics. D, Applied physics (22.08.2018)
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Journal Article
Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2
Wang, Qianwen, Sang, Pengpeng, Wang, Fei, Wei, Wei, Chen, Jiezhi
Published in IEEE transactions on electron devices (01.09.2021)
Published in IEEE transactions on electron devices (01.09.2021)
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Journal Article
Operation Scheme Optimizations to Achieve Ultrahigh Endurance (1010) in Flash Memory
Feng, Yang, Guo, Xinyi, Wang, Chengcheng, Qi, Yueran, Zhang, Junyu, Liu, Jing, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi
Published in IEEE transactions on electron devices (01.11.2024)
Published in IEEE transactions on electron devices (01.11.2024)
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Journal Article
Re-Annealing-Induced Recovery in 7nm Hf 0.5 Zr 0.5 O 2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
Li, Xiaopeng, Tai, Lu, Zhao, Guoqing, Zhan, Xuepeng, Wang, Xiaolei, Kobayashi, Masaharu, Wu, Jixuan, Chen, Jiezhi
Published in IEEE electron device letters (01.08.2023)
Published in IEEE electron device letters (01.08.2023)
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Journal Article
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory
Ma, Xiaolei, Liu, Yue-Yang, Zeng, Lang, Chen, Jiezhi, Wang, Runsheng, Wang, Lin-Wang, Wu, Yanqing, Jiang, Xiangwei
Published in ACS applied materials & interfaces (12.01.2022)
Published in ACS applied materials & interfaces (12.01.2022)
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Journal Article
Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing
Tang, Mingfeng, Mei, Junyao, Zhan, Xuepeng, Wang, Chengcheng, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wu, Jixuan, Chen, Jiezhi
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory
Jia, Menghua, Kong, Yachen, Zhan, Xuepeng, Zhang, Meng, Wu, Fei, Chen, Jiezhi
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.11.2022)
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.11.2022)
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Journal Article
Ferroelectricity induced double-direction conductance modulation in Hf x Zr1−x O2 capacitors
Chen, Bo, Wu, Shuhao, Yu, Xiaolin, Tang, Mingfeng, Zhao, Guoqing, Tai, Lu, Zhan, Xuepeng, Chen, Jiezhi
Published in Nanotechnology (03.12.2022)
Published in Nanotechnology (03.12.2022)
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Journal Article
Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance
Sang, Pengpeng, Wang, Qianwen, Wei, Wei, Tai, Lu, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article