Thin film ferroelectric photonic-electronic memory
Zhang, Gong, Chen, Yue, Zheng, Zijie, Shao, Rui, Zhou, Jiuren, Zhou, Zuopu, Jiao, Leming, Zhang, Jishen, Wang, Haibo, Kong, Qiwen, Sun, Chen, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, Gong, Xiao
Published in Light, science & applications (23.08.2024)
Published in Light, science & applications (23.08.2024)
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Journal Article
Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array
Zhou, Zuopu, Jiao, Leming, Zhou, Jiuren, Zheng, Zijie, Chen, Yue, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model
Zhou, Zuopu, Jiao, Leming, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms
Wang, Xiaolin, Sun, Chen, Zheng, Zijie, Jiao, Leming, Zhou, Zuopu, Zhang, Dong, Liu, Gan, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3
Zhou, Jiuren, Kang, Yuye, Wang, Xinke, Zhou, Zuopu, Ni, Haotian, Jiao, Leming, Zheng, Zijie, Gong, Xiao
Published in Journal of physics. D, Applied physics (06.01.2022)
Published in Journal of physics. D, Applied physics (06.01.2022)
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Journal Article
BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs-Part II: Mechanism With Load Line Analysis and Scaling Strategy
Zheng, Zijie, Zhang, Dong, Jiao, Leming, Sun, Chen, Zhou, Zuopu, Chen, Yue, Kong, Qiwen, Wang, Xiaolin, Liu, Gan, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs
Kong, Qiwen, Liu, Long, Han, Kaizhen, Sun, Chen, Jiao, Leming, Zhou, Zuopu, Zheng, Zijie, Liu, Gan, Xu, Haiwen, Zhang, Jishen, Chen, Yue, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs-Part I: Experimental Results With Boosted Memory Window
Zheng, Zijie, Jiao, Leming, Zhang, Dong, Sun, Chen, Zhou, Zuopu, Wang, Xiaolin, Liu, Gan, Kong, Qiwen, Chen, Yue, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
Zhou, Zuopu, Jiao, Leming, Zhou, Jiuren, Kong, Qiwen, Luo, Sheng, Sun, Chen, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Liu, Gan, Liang, Gengchiau, Gong, Xiao
Published in IEEE electron device letters (01.01.2022)
Published in IEEE electron device letters (01.01.2022)
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Journal Article
Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering
Yan, Qinyuan, Zhou, Jiuren, Feng, Wenjing, Liu, Ning, Zheng, Siying, Jiao, Leming, Liang, Jie, Liu, Yan, Hao, Yue, Han, Genquan
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Hydrogen-Related Instability of IGZO Field-Effect Transistors
Liu, Gan, Kong, Qiwen, Zhang, Dong, Wang, Xiaolin, Zhou, Zuopu, Jiao, Leming, Han, Kaizhen, Kang, Yuye, Nguyen, Bich-Yen, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
Zhang, Dong, Wu, Jixuan, Kong, Qiwen, Zheng, Zijie, Zhou, Zuopu, Liu, Long, Han, Kaizhen, Sun, Chen, Wang, Xiaolin, Liu, Gan, Jiao, Leming, Kang, Yuye, Zheng, Gerui, Chen, Jiezhi, Gong, Xiao
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors
Kong, Qiwen, Liu, Long, Zheng, Zijie, Sun, Chen, Zhou, Zuopu, Jiao, Leming, Kumar, Annie, Shao, Rui, Zhang, Jishen, Xu, Haiwen, Chen, Yue, Nguyen, Bich-Yen, Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Transposable Memory Based on the Ferroelectric Field-Effect Transistor
Wang, Jianze, Zhang, Wei, Wu, Zhen, Wang, Yimin, Jiao, Leming, Wang, Xiaolin, Gong, Xiao, Fong, Xuanyao
Published in 2024 IEEE International Symposium on Circuits and Systems (ISCAS) (19.05.2024)
Published in 2024 IEEE International Symposium on Circuits and Systems (ISCAS) (19.05.2024)
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Conference Proceeding
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack
Zhou, Zuopu, Jiao, Leming, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Ni, Kai, Gong, Xiao
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory
Zheng, Zijie, Xie, Jiawei, Sun, Yiyuan, Xu, Ying, Wang, Xiaolin, Jiao, Leming, Zhou, Zuopu, Kong, Qiwen, Chen, Yue, Gong, Xiao
Published in 2023 International Conference on IC Design and Technology (ICICDT) (25.09.2023)
Published in 2023 International Conference on IC Design and Technology (ICICDT) (25.09.2023)
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Conference Proceeding
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention
Zhou, Zuopu, Leming, Jiao, Zhou, Jiuren, Zheng, Zijie, Chen, Yue, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
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Conference Proceeding
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices
Jiao, Leming, Han, Kaizhen, Zhou, Zuopu, Zheng, Zijie, Wang, Xiaolin, Kong, Qiwen, Kang, Yuye, Zhang, Jishen, Liu, Long, Gong, Xiao
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application
Jiao, Leming, Zhou, Zuopu, Zheng, Zijie, Kang, Yuye, Sun, Chen, Kong, Qiwen, Wang, Xiaolin, Zhang, Dong, Liu, Gan, Liu, Long, Gong, Xiao
Published in 2022 International Conference on IC Design and Technology (ICICDT) (21.09.2022)
Published in 2022 International Conference on IC Design and Technology (ICICDT) (21.09.2022)
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Conference Proceeding
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm,> 2×109 Endurance, and 58.3% Area Saving
Wang, Xiaolin, Zheng, Zijie, Kong, Qiwen, Jiao, Leming, Han, Kaizhen, Sun, Chen, Zhou, Zuopu, Liu, Long, Kang, Yuye, Liu, Gan, Zhang, Dong, Gong, Xiao
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding