High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
Xie, Z.L., Zhang, R., Liu, B., Ji, X.L., Li, L., Liu, C.X., Jiang, R.L., Gong, H.M., Zhao, Hong, Han, P., Shi, Y., Zheng, Y.D.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
The template effects on AlN/Al0.3Ga0.7N distributed bragg reflectors grown by MOCVD
LIU, B, ZHANG, R, GU, S. L, SHI, Y, ZHENG, Y. D, XIE, Z. L, JI, X. L, JIANG, R. L, XIU, X. Q, LI, L, LIU, C. X, YU, H. Q, HAN, P
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
Kong, Y. C., Chu, R. M., Zheng, Y. D., Zhou, C. H., Shen, B., Gu, S. L., Zhang, R., Han, P., Shi, Y., Jiang, R. L.
Published in Physica status solidi. A, Applications and materials science (01.04.2006)
Published in Physica status solidi. A, Applications and materials science (01.04.2006)
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Study of two-dimensional electron gas in AlN/GaN heterostructure by a self-consistent method
Kong, Y. C., Zheng, Y. D., Zhou, C. H., Deng, Y. Z., Gu, S. L., Shen, B., Zhang, R., Jiang, R. L., Shi, Y., Han, P.
Published in Physica Status Solidi (b) (01.03.2004)
Published in Physica Status Solidi (b) (01.03.2004)
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Establishment of mouse model of qi-deficiency gastrointestinal failure
Huang, L Q, Shen, W, Qiu, T, Zhi, Y H, Wang, L C, Mao, S H, Xing, X, Shen, S H, Jiang, R L
Published in Journal of biological regulators and homeostatic agents (01.01.2019)
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Published in Journal of biological regulators and homeostatic agents (01.01.2019)
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Influence of AlGaN/GaN interface polarization fields on the properties of photoconductive detectors
Zhou, J. J., Jiang, R. L., Wen, B., Liang, L. Y., Ji, X. L., Shen, B., Zhang, R., Zheng, Y. D.
Published in Journal of applied physics (15.05.2004)
Published in Journal of applied physics (15.05.2004)
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A prospective study of transfusion-transmitted virus transmission by blood transfusion
Jiang, R. -L., Lu, Q., Luo, K. -X., Tan, F. -M.
Published in Journal of viral hepatitis (01.01.1999)
Published in Journal of viral hepatitis (01.01.1999)
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Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure
CHEN, D. J, SHEN, B, WU, X. L, SHEN, J. C, XU, F. J, ZHANG, K. X, ZHANG, R, JIANG, R. L, SHI, Y, ZHENG, Y. D
Published in Applied physics. A, Materials science & processing (01.05.2005)
Published in Applied physics. A, Materials science & processing (01.05.2005)
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A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
KONG, Y. C, ZHENG, Y. D, ZHOU, C. H, DENG, Y. Z, SHEN, B, GU, S. L, ZHAI, R, HAN, P, JIANG, R. L, SHI, Y
Published in Solid-state electronics (01.02.2005)
Published in Solid-state electronics (01.02.2005)
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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
Chu, R.M., Zheng, Y.D., Zhou, Y.G., Gu, S.L., Shen, B., Zhang, R., Jiang, R.L., Han, P., Shi, Y.
Published in Applied physics. A, Materials science & processing (01.10.2003)
Published in Applied physics. A, Materials science & processing (01.10.2003)
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Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films
LI, W. P, LIU, Y. M, LIU, Z. G, ZHENG, Y. D, ZHANG, R, CHEN, J, CHENG, P, YUAN, X. L, ZHOU, Y. G, SHEN, B, JIANG, R. L, SHI, Y
Published in Applied physics. A, Materials science & processing (2001)
Published in Applied physics. A, Materials science & processing (2001)
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High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
Sun, L., Han, P., Zheng, Y.D., Chen, P., Yan, F., Gu, S.L., Jiang, R.L., Zhu, S.M.
Published in Optical materials (01.07.2003)
Published in Optical materials (01.07.2003)
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Conference Proceeding
Fabrication of silicon nanowires
LIU, J. L, LU, Y, SHI, Y, GU, S. L, JIANG, R. L, WANG, F, ZHENG, Y. D
Published in Applied physics. A, Materials science & processing (01.05.1998)
Published in Applied physics. A, Materials science & processing (01.05.1998)
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