Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC
Matsuura, Hideharu, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Ishida, Yuuki, Yoshida, Sadafumi
Published in Journal of applied physics (21.09.2023)
Published in Journal of applied physics (21.09.2023)
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Journal Article
Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
Kosugi, Ryoji, Ji, Shiyang, Mochizuki, Kazuhiro, Adachi, Kohei, Segawa, Satoshi, Kawada, Yasuyuki, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
Matsuura, Hideharu, Takeshita, Akinobu, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.05.2020)
Published in Japanese Journal of Applied Physics (01.05.2020)
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Journal Article
Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC
Matsuura, Hideharu, Kondo, Yuki, Iida, Kosuke, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.03.2021)
Published in Japanese Journal of Applied Physics (01.03.2021)
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Journal Article
Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices
Kosugi, Ryoji, Ji, Shiyang, Mochizuki, Kazuhiro, Kouketsu, Hidenori, Kawada, Yasuyuki, Fujisawa, Hiroyuki, Kojima, Kazutoshi, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.09.2019)
Published in Japanese Journal of Applied Physics (01.09.2019)
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Journal Article
Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration
Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime
Published in Applied physics express (01.10.2018)
Published in Applied physics express (01.10.2018)
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Journal Article
Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process
Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, Hajime
Published in Applied physics express (01.06.2015)
Published in Applied physics express (01.06.2015)
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Journal Article
The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition
Ji, Shiyang, Kojima, Kazutoshi, Ishida, Yuuki, Saito, Shingo, Kato, Tomohisa, Tsuchida, Hidekazu, Yoshida, Sadafumi, Okumura, Hajime
Published in Journal of crystal growth (01.10.2013)
Published in Journal of crystal growth (01.10.2013)
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Journal Article
Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy
Mochizuki, Kazuhiro, Ji, Shiyang, Kosugi, Ryoji, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2018)
Published in 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2018)
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Conference Proceeding
Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD
Ji, Shiyang, Eto, Kazuma, Yoshida, Sadafumi, Kojima, Kazutoshi, Ishida, Yuuki, Saito, Shingo, Tsuchida, Hidekazu, Okumura, Hajime
Published in Applied physics express (01.12.2015)
Published in Applied physics express (01.12.2015)
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Journal Article
Influence of growth pressure on filling 4H-SiC trenches by CVD method
Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
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Journal Article
Effect of growth temperature on structure properties of InN grown by pressurized-reactor metalorganic vapor phase epitaxy
Zhang, Yuantao, Liu, Yuhuai, Kimura, Takeshi, Hirata, Masaki, Prasertusk, Kiattiwut, Ji, Shiyang, Katayama, Ryuji, Matsuoka, Takashi
Published in Physica status solidi. C (01.02.2011)
Published in Physica status solidi. C (01.02.2011)
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Journal Article
Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
Takeshita, Akinobu, JI, Shiyang, Yoshida, Sadafumi, Nishihata, Rinya, Ogawa, Kohei, Imamura, Tatsuya, Kato, Tomohisa, Okumura, Hajime, Takano, Kota, Kojima, Kazutoshi, Hidaka, Atsuki, Eto, Kazuma, Matsuura, Hideharu, Okuda, Kazuya
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
Takeshita, Akinobu, Yoshida, Sadafumi, Ogawa, Kohei, Imamura, Tatsuya, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime, Eto, Kazuma, Takano, Kota, Hidaka, Atsuki, Matsuura, Hideharu, JI, Shiyang, Okuda, Kazuya
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
Nishihata, Rinya, Okumura, Hajime, Yoshida, Sadafumi, Okuda, Kazuya, Kato, Tomohisa, Imamura, Tatsuya, Hidaka, Atsuki, Matsuura, Hideharu, Takeshita, Akinobu, Eto, Kazuma, JI, Shiyang, Kojima, Kazutoshi, Takano, Kota
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
Matsuura, Hideharu, Takeshita, Akinobu, Eto, Kazuma, Yoshida, Sadafumi, Okuda, Kazuya, JI, Shiyang, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime, Imamura, Tatsuya, Hidaka, Atsuki, Takano, Kota
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article