Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode
Jeong, Hoon, Garzda, E. A., Ji, Mi-Hee, Cho, Minkyu, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Otte, A. N., Dupuis, Russell D.
Published in IEEE journal of quantum electronics (01.06.2023)
Published in IEEE journal of quantum electronics (01.06.2023)
Get full text
Journal Article
Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation
Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang
Published in IEEE transactions on electron devices (01.10.2019)
Published in IEEE transactions on electron devices (01.10.2019)
Get full text
Journal Article
Rethinking phonons: The issue of disorder
Seyf, Hamid Reza, Yates, Luke, Bougher, Thomas L., Graham, Samuel, Cola, Baratunde A., Detchprohm, Theeradetch, Ji, Mi-Hee, Kim, Jeomoh, Dupuis, Russell, Lv, Wei, Henry, Asegun
Published in npj computational materials (16.11.2017)
Published in npj computational materials (16.11.2017)
Get full text
Journal Article
Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays
Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay
Published in IEEE photonics technology letters (01.10.2016)
Published in IEEE photonics technology letters (01.10.2016)
Get full text
Journal Article
Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape
Shervin, Shahab, Moradnia, Mina, Alam, Md Kamrul, Tong, Tain, Ji, Mi-Hee, Chen, Jie, Pouladi, Sara, Detchprohm, Theeradetch, Forrest, Rebecca, Bao, Jiming, Dupuis, Russell D, Ryou, Jae-Hyun
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.03.2021)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.03.2021)
Get full text
Journal Article
Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao
Published in Materials (14.06.2019)
Published in Materials (14.06.2019)
Get full text
Journal Article
Temperature-Dependent Characteristics of GaN Homojunction Rectifiers
Tsung-Ting Kao, Jeomoh Kim, Yi-Che Lee, Haq, Abul Fazal Muhammad Saniul, Mi-Hee Ji, Detchprohm, Theeradetch, Dupuis, Russell D., Shyh-Chiang Shen
Published in IEEE transactions on electron devices (01.08.2015)
Published in IEEE transactions on electron devices (01.08.2015)
Get full text
Journal Article
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
Kim, Jeomoh, Lochner, Zachary, Ji, Mi-Hee, Choi, Suk, Kim, Hee Jin, Kim, Jin Soo, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun
Published in Journal of crystal growth (01.02.2014)
Published in Journal of crystal growth (01.02.2014)
Get full text
Journal Article
Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates
Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Ryou, Jae-Hyun, Sood, Ashok K., Dhar, Nibir D., Lewis, Jay
Published in Applied physics express (01.12.2015)
Published in Applied physics express (01.12.2015)
Get full text
Journal Article
Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition
Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A., Ryou, Jae-Hyun
Published in Journal of applied physics (28.09.2015)
Published in Journal of applied physics (28.09.2015)
Get full text
Journal Article
Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes
Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Shervin, Shahab, Ryou, Jae-Hyun
Published in Physica status solidi. A, Applications and materials science (01.05.2016)
Published in Physica status solidi. A, Applications and materials science (01.05.2016)
Get full text
Journal Article
III-N High-Power Bipolar Transistors
Dupuis, Russell D, Kim, Jeomoh, Lee, Yi-Che, Lochner, Zachary, Ji, Mi-Hee, Kao, Tsung-Ting, Ryou, Jae-Hyun, Detchphrom, Theeradetch, Shen, Shyh-Chiang
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
Get full text
Journal Article
GaN/InGaN avalanche phototransistors
Shen, Shyh-Chiang, Kao, Tsung-Ting, Kim, Hee-Jin, Lee, Yi-Che, Kim, Jeomoh, Ji, Mi-Hee, Ryou, Jae-Hyun, Detchprohm, Theeradetch, Dupuis, Russell D.
Published in Applied physics express (01.03.2015)
Published in Applied physics express (01.03.2015)
Get full text
Journal Article
Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs
Jeomoh Kim, Mi-Hee Ji, Lochner, Zachary, Suk Choi, Sebkhi, Nordine, Jianping Liu, Satter, Md M., Jin Soo Kim, Yoder, P. Douglas, Dupuis, Russell D., Juday, Reid, Fischer, Alec M., Ponce, Fernando A., Jae-Hyun Ryou
Published in IEEE photonics technology letters (15.09.2013)
Published in IEEE photonics technology letters (15.09.2013)
Get full text
Journal Article
Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD
Mi-Hee Ji, Yuh-Shiuan Liu, Jeomoh Kim, Young-Jae Park, Detchprohm, Theeradetch, Dupuis, Russell D., Tsung-Ting Kao, Shyh-Chiang Shen, Mehta, Karan, Yoder, P. Douglas, Hongen Xie, Ponce, Fernando, Sood, Ashok, Dhar, Nibir, Lewis, Jay
Published in 2017 Conference on Lasers and Electro-Optics (CLEO) (01.05.2017)
Published in 2017 Conference on Lasers and Electro-Optics (CLEO) (01.05.2017)
Get full text
Conference Proceeding
Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Liu, Henan, Zhang, Yong, Steenbergen, Elizabeth H, Liu, Shi, Lin, Zhiyuan, Yong-Hang, Zhang, Kim, Jeomoh, Mi-Hee Ji, Detchprohm, Theeradetch, Dupuis, Russell D, Kim, Jin K, Hawkins, Samuel D, Klem, John F
Published in arXiv.org (16.04.2017)
Published in arXiv.org (16.04.2017)
Get full text
Paper
Journal Article
Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao
Published in Materials (01.06.2019)
Published in Materials (01.06.2019)
Get full text
Journal Article
Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted]
Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Ryou, Jae-Hyun, Dupuis, Russell D, Sood, Ashok K, Dhar, Nibir K
Published in IEEE photonics technology letters (15.03.2015)
Published in IEEE photonics technology letters (15.03.2015)
Get full text
Journal Article