A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects
Syamal, Binit, Xing Zhou, Ben Chiah, Siau, Jesudas, Anand M., Arulkumaran, Subramaniam, Geok Ing Ng
Published in IEEE transactions on electron devices (01.04.2016)
Published in IEEE transactions on electron devices (01.04.2016)
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