Progress in dislocation stress field model and its appications
Kwon, Uihui, Min, Jeong-Guk, Lee, Seon-Young, Schmidt, Alexander, Kim, Dae Sin, Kayama, Yasuyuki, Nishizawa, Yutaka, Ishikawa, Kiyoshi
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
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Conference Proceeding
Layout-induced stress effects on the performance and variation of FinFETs
Lee, Choongmok, Kang, Hyun-Chul, Min, Jeong Guk, Kim, Jongchol, Kwon, Uihui, Lee, Keun-Ho, Park, Youngkwan
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
Journal Article
Modeling of stress-dependent wet etch characteristic for P-SOG STI process
Jeong-Guk Min, Sang-Ho Rha, Tai-Kyung Kim, Ui-Hui Kwon, Ju-Seon Goo, Young-kwan Park, Jeong-Taek Kong
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
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Conference Proceeding
Intelligent MOL(Middle-Of-Line) Design Methodology for 3D FinFET Manufacturability
MIN, Jeong Guk, Noh, Sang Do, Choi, Jaehyuk
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
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Journal Article
The Impact of Dislocation on Bulk -Si FinFET Technologies: Physical Modeling of Strain Relaxation and Enhancement by Dislocation
Min, Jeong Guk, Jeong, Changwook, Kwon, Uihui, Kim, Dae Sin, Kim, Suhyun, Kim, Ilryoung, Yang, Joon-Sung
Published in 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (01.10.2018)
Published in 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (01.10.2018)
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Conference Proceeding