Gate-first high-k/metal gate DRAM technology for low power and high performance products
Sung, Minchul, Jang, Se-Aug, Lee, Hyunjin, Ji, Yun-Hyuck, Kang, Jae-Il, Jung, Tae-O, Ahn, Tae-Hang, Son, Yun-Ik, Kim, Hyung-Chul, Lee, Sun-Woo, Lee, Seung-Mi, Lee, Jung-Hak, Baek, Seung-Beom, Doh, Eun-Hyup, Cho, Heung-Jae, Jang, Tae-Young, Jang, Il-Sik, Han, Jae-Hwan, Ko, Kyung-Bo, Lee, Yu-Jun, Shin, Su-Bum, Yu, Jae-Seon, Cho, Sung-Hyuk, Han, Ji-Hye, Kang, Dong-Kyun, Kim, Jinsung, Lee, Jae-Sang, Ban, Keun-Do, Yeom, Seung-Jin, Nam, Hyun-Wook, Lee, Dong-Kyu, Jeong, Mun-Mo, Kwak, Byungil, Park, Jeongsoo, Choi, Kisik, Park, Sung-Kye, Kwak, Noh-Jung, Hong, Sung-Joo
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING USING THE SAME
KIM, SEUNG HWAN, CHO, YOUNG MAN, CHUN, YUN SEOK, HWANG, CHANG SUN, JEONG, MUN MO, SIM, JAI HOON, YOON, JAE MAN, KIM, YOUNG BOG
Year of Publication 04.04.2014
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Year of Publication 04.04.2014
Patent