A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface
Yuh, Jong Hak, Li, Yen-Lung Jason, Li, Heguang, Oyama, Yoshihiro, Hsu, Cynthia, Anantula, Pradeep, Jeong, Gwang Yeong Stanley, Amarnath, Anirudh, Darne, Siddhesh, Bhatia, Sneha, Tang, Tianyu, Arya, Aditya, Rastogi, Naman, Ookuma, Naoki, Mizukoshi, Hiroyuki, Yap, Alex, Wang, Demin, Kim, Steve, Wu, Yonggang, Peng, Min, Lu, Jason, Ip, Tommy, Malhotra, Seema, Han, Taekeun, Okumura, Masatoshi, Liu, Jiwen, Sohn, Jeongduk John, Chibvongodze, Hardwell, Balaga, Muralikrishna, Matsuda, Akihiro, Chen, Chen, K. V., Indra, G., V. S. N. K. Chaitanya, Ramachandra, Venky, Kato, Yosuke, Kumar, Ravi J., Wang, Huijuan, Moogat, Farookh, Yoon, In-Soo, Kanda, Kazushige, Shimizu, Takahiro, Shibata, Noboru, Yanagidaira, Kosuke, Kodama, Takuyo, Fukuda, Ryo, Hirashima, Yasuhiro, Abe, Mitsuhiro
Published in IEEE journal of solid-state circuits (01.01.2023)
Published in IEEE journal of solid-state circuits (01.01.2023)
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