A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage
Na, Daehoon, Lee, Jang-woo, Lee, Seon-Kyoo, Cho, Hwasuk, Lee, Junha, Yang, Manjae, Song, Eunjin, Kavala, Anil, Kim, Tongsung, Jang, Dong-Su, Jo, Youngmin, Shin, Ji-Yeon, Chun, Byung-Kwan, Lee, Tae-sung, Jeong, Byunghoon, Yoon, Chi-Weon, Kang, Dongku, Lee, Seungjae, Ihm, Jungdon, Byeon, Dae Seok, Lee, Jinyub, Song, Jai Hyuk
Published in IEEE journal of solid-state circuits (01.04.2021)
Published in IEEE journal of solid-state circuits (01.04.2021)
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Journal Article
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface
Kim, Moosung, Yun, Sung Won, Park, Jungjune, Park, Hyun Kook, Lee, Jungyu, Kim, Yeong Seon, Na, Daehoon, Choi, Sara, Song, Youngsun, Lee, Jonghoon, Yoon, Hyunjun, Lee, Kangbin, Jeong, Byunghoon, Kim, Sanglok, Park, Junhong, Lee, Cheon An, Lee, Jaeyun, Lee, Jisang, Chun, Jin Young, Jang, Joonsuc, Yang, Younghwi, Moon, Seung Hyun, Choi, Myunghoon, Kim, Wontae, Kim, Jungsoo, Yoon, Seokmin, Kwak, Pansuk, Lee, Myunghun, Song, Raehyun, Kim, Sunghoon, Yoon, Chiweon, Kang, Dongku, Lee, Jin-Yub, Song, Jaihyuk
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
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Conference Proceeding
30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
Cho, Jiho, Kang, D. Chris, Park, Jongyeol, Nam, Sang-Wan, Song, Jung-Ho, Jung, Bong-Kil, Lyu, Jaedoeg, Lee, Hogil, Kim, Won-Tae, Jeon, Hongsoo, Kim, Sunghoon, Kim, In-Mo, Son, Jae-Ick, Kang, Kyoungtae, Shim, Sang-Won, Park, JongChul, Lee, Eungsuk, Kang, Kyung-Min, Park, Sang-Won, Lee, Jaeyun, Moon, Seung Hyun, Kwak, Pansuk, Jeong, ByungHoon, Lee, Cheon An, Kim, Kisung, Ko, Junyoung, Kwon, Tae-Hong, Lee, Junha, Lee, Yohan, Kim, Chaehoon, Lee, Myeong-Woo, Yun, Jeong-yun, Lee, HoJun, Choi, Yonghyuk, Hong, Sanggi, Park, JongHoon, Shin, Yoonsung, Kim, Hojoon, Kim, Hansol, Yoon, Chiweon, Byeon, Dae Seok, Lee, Seungjae, Lee, Jin-Yub, Song, Jaihyuk
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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Conference Proceeding
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
Kim, Chulbum, Cho, Ji-Ho, Jeong, Woopyo, Park, Il-han, Park, Hyun-Wook, Kim, Doo-Hyun, Kang, Daewoon, Lee, Sunghoon, Lee, Ji-Sang, Kim, Wontae, Park, Jiyoon, Ahn, Yang-lo, Lee, Jiyoung, Lee, Jong-hoon, Kim, Seungbum, Yoon, Hyun-Jun, Yu, Jaedoeg, Choi, Nayoung, Kwon, Yelim, Kim, Nahyun, Jang, Hwajun, Park, Jonghoon, Song, Seunghwan, Park, Yongha, Bang, Jinbae, Hong, Sangki, Jeong, Byunghoon, Kim, Hyun-Jin, Lee, Chunan, Min, Young-Sun, Lee, Inryul, Kim, In-Mo, Kim, Sung-Hoon, Yoon, Dongkyu, Kim, Ki-Sung, Choi, Youngdon, Kim, Moosung, Kim, Hyunggon, Kwak, Pansuk, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-yub, Park, Ki-Tae, Kyung, Kye-hyun
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
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Conference Proceeding
Semiconductor device including delay compensation circuit
Lee, Taesung, Lee, Seonkyoo, Jeong, Byunghoon, Kavala, Anil, Ihm, Jeongdon
Year of Publication 23.07.2024
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Year of Publication 23.07.2024
Patent
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate
Seungjae Lee, Jin-yub Lee, Il-han Park, Jongyeol Park, Sung-won Yun, Min-su Kim, Jong-hoon Lee, Minseok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-no Im, Hyejin Yim, Kyung-hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun-wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Hirano, Makoto, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-hyun Kyung, Jeong-Hyuk Choi
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
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Conference Proceeding
Memory device supporting DBI interface and operating method of memory device
Kim, Tongsung, Lee, Seonkyoo, Jo, Youngmin, Jeong, Byunghoon, Yoon, Chiweon
Year of Publication 12.09.2023
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Year of Publication 12.09.2023
Patent